This detailed comparison of 47C04-I/WF16K and 47L04-I/S16K in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.
| Manufacturer | Roving Networks / Microchip Technology | Roving Networks / Microchip Technology |
|---|---|---|
| Package / Case | Die | Die |
| Description | IC EERAM 4KBIT I2C 1MHZ DIE | IC EERAM 4KBIT I2C 1MHZ DIE |
| In Stock | 0 | 0 |
| Mounting Type | Surface Mount | Surface Mount |
| Part Status | Active | Active |
| Series | - | - |
| Package | Tray | Tape & Reel (TR) |
| Memory Type | Non-Volatile | Non-Volatile |
| Memory Format | EERAM | EERAM |
| Technology | EEPROM, SRAM | EEPROM, SRAM |
| Memory Size | 4Kb (512 x 8) | 4Kb (512 x 8) |
| Memory Interface | I²C | I²C |
| Clock Frequency | 1 MHz | 1 MHz |
| Write Cycle Time - Word, Page | 1ms | 1ms |
| Access Time | 400 ns | 400 ns |
| Voltage - Supply | 4.5V ~ 5.5V | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) | -40°C ~ 85°C (TA) |
| Supplier Device Package | Die | Die |
| Part Number | Manufacturer | Description | Request For Quote |
|---|---|---|---|
| MTFC32GJTED-4M IT | Micron Technology | IC FLASH 256GBIT MMC 169VFBGA |
|
| AT24C512-10UI-1.8 | Roving Networks / Microchip Technology | IC EEPROM 512KBIT I2C 8DBGA |
|
| MT29F128G08CECBBH1-10IT:B TR | Micron Technology | IC FLASH 128GBIT PAR 100VBGA |
|
| 7132SA100JI | Renesas Electronics America | IC SRAM 16KBIT PARALLEL 52PLCC |
|
| MT29F32G08AFABAWP:B TR | Micron Technology | IC FLASH 32GBIT PARALLEL 48TSOP |
|
| MT29F256G08CBHBBJ4-3RES:B TR | Micron Technology | IC FLASH 256GBIT PARALLEL 333MHZ |
|
| MT35XL512ABA2G12-0AAT TR | Micron Technology | IC FLASH 512MBIT XCCELA 24TPBGA |
|
| MT51K256M32HF-50 N:A TR | Micron Technology | IC RAM 8GBIT PARALLEL 1.25GHZ |
|
| S99PL127J0150 | Cypress Semiconductor | IC FLASH |
|
| 28232478 A | Cypress Semiconductor | IC MEMORY 1GB FLASH 3.0V SMD |
|
| MT41J128M16JT-107:K TR | Micron Technology | IC DRAM 2GBIT PARALLEL 96FBGA |
|
| M29W640GL7AZF6E | Micron Technology | IC FLASH 64MBIT PARALLEL 64TBGA |
|
| 70V27L15PFI/2703 | Renesas Electronics America | IC SRAM 512KBIT PARALLEL 100TQFP |
|
| MT53D512M64D4NW-053 WT ES:D | Micron Technology | IC DRAM 32GBIT 1866MHZ 432VFBGA |
|
| DS28E22P-04A-00+1 | Maxim Integrated | IC EEPROM 2KBIT 1-WIRE 6TSOC |
|
