This detailed comparison of AT24C32D-STPD-TVAO and AT24C01C-STPD-TVAO in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.
| Manufacturer | Roving Networks / Microchip Technology | Roving Networks / Microchip Technology |
|---|---|---|
| Package / Case | SOT-23-5 Thin, TSOT-23-5 | SOT-23-5 Thin, TSOT-23-5 |
| Description | IC EEPROM 32KBIT I2C TSOT23-5 | IC EEPROM 1KBIT I2C TSOT23-5 |
| In Stock | 1 997 | 4 638 |
| Mounting Type | Surface Mount | Surface Mount |
| Part Status | Active | Active |
| Series | Automotive, AEC-Q100 | Automotive, AEC-Q100 |
| Package | Tape & Reel (TR) | Tape & Reel (TR) |
| Memory Type | Non-Volatile | Non-Volatile |
| Memory Format | EEPROM | EEPROM |
| Technology | EEPROM | EEPROM |
| Memory Size | 32Kb (4K x 8) | 1Kb (128 x 8) |
| Memory Interface | I²C | I²C |
| Clock Frequency | 1 MHz | 1 MHz |
| Write Cycle Time - Word, Page | 5ms | 5ms |
| Access Time | 900 ns | 900 ns |
| Voltage - Supply | 2.5V ~ 5.5V | 2.5V ~ 5.5V |
| Operating Temperature | -40°C ~ 125°C (TA) | -40°C ~ 125°C (TA) |
| Supplier Device Package | TSOT-23-5 | TSOT-23-5 |
| Part Number | Manufacturer | Description | Request For Quote |
|---|---|---|---|
| S30ML02GP30TFI500 | Cypress Semiconductor | IC FLASH MEMORY 48TSOP |
|
| MT46V32M16P-5B L:J | Micron Technology | IC DRAM 512MBIT PARALLEL 66TSOP |
|
| MT53D1G64D8NW-062 WT:D | Micron Technology | LPDDR4 64G 1GX64 FBGA 8DP |
|
| 93C46C/WF15K | Roving Networks / Microchip Technology | IC EEPROM 1KBIT SPI 3MHZ DIE |
|
| 7024S25PFI | Renesas Electronics America | IC SRAM 64KBIT PARALLEL 100TQFP |
|
| MT25QL128ABB1EW7-CSIT | Micron Technology | IC FLASH 128MBIT SPI 8WPDFN |
|
| 93C56C/W15K | Roving Networks / Microchip Technology | IC EEPROM 2KBIT SPI 3MHZ DIE |
|
| CG8204AA | Cypress Semiconductor | MEMORY SRAM ASYNC |
|
| THGBMHG8C4LBAW7 | Toshiba Memory America, Inc. (Kioxia America, Inc.) | IC FLASH MEM MMC 169VFBGA |
|
| MT29E512G08CUCDBJ6-6:D | Micron Technology | IC FLASH 512GBIT PAR 132LBGA |
|
| 93C86C/WF15K | Roving Networks / Microchip Technology | IC EEPROM 16KBIT SPI 3MHZ DIE |
|
| MT53B512M32D2NP-062 AAT:C TR | Micron Technology | IC DRAM 16GBIT 1.6GHZ 200WFBGA |
|
| MT41J128M8DA-093:J | Micron Technology | IC SDRAM DDR3 8GB |
|
| MT52L256M64D2QB-125 XT ES:B | Micron Technology | IC DRAM 16GBIT 800MHZ FBGA |
|
| MT53D512M32D2NP-062 WT:D TR | Micron Technology | IC DRAM 16GBIT 1600MHZ 200WFBGA |
|
