This detailed comparison of CAT25160YE-GC and CAT25160YI-GC in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.
| Manufacturer | Sanyo Semiconductor/ON Semiconductor | Sanyo Semiconductor/ON Semiconductor |
|---|---|---|
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP (0.173", 4.40mm Width) |
| Description | IC EEPROM 16KB SER SPI 8TSSOP | IC EEPROM 16KB SER SPI 8TSSOP |
| In Stock | 7 695 | 1 990 |
| Mounting Type | Surface Mount | Surface Mount |
| Part Status | Last Time Buy | Last Time Buy |
| Series | - | - |
| Package | Tube | Tube |
| Memory Type | Non-Volatile | Non-Volatile |
| Memory Format | EEPROM | EEPROM |
| Technology | EEPROM | EEPROM |
| Memory Size | 16Kb (2K x 8) | 16Kb (2K x 8) |
| Memory Interface | SPI | SPI |
| Clock Frequency | 10 MHz | 10 MHz |
| Write Cycle Time - Word, Page | 5ms | 5ms |
| Access Time | - | - |
| Voltage - Supply | 2.5V ~ 5.5V | 1.8V ~ 5.5V |
| Operating Temperature | -40°C ~ 125°C (TA) | -40°C ~ 85°C (TA) |
| Supplier Device Package | 8-TSSOP | 8-TSSOP |
| Part Number | Manufacturer | Description | Request For Quote |
|---|---|---|---|
| MT29F32G08AECCBH1-10:C | Micron Technology | IC FLASH 32GBIT PARALLEL 100VBGA |
|
| MT42L256M32D2LG-25 WT:A TR | Micron Technology | IC DRAM 8GBIT PARALLEL 168FBGA |
|
| IS43TR16512S2DL-125KBLI | ISSI (Integrated Silicon Solution, Inc.) | IC DRAM 8GBIT PARALLEL 96LWBGA |
|
| MT29VZZZBD8DQOPR-053 W ES.9G8 TR | Micron Technology | ALL IN ONE MCP 560G |
|
| MT29C4G96MAZBACJG-5 WT | Micron Technology | IC FLASH RAM 4GBIT PAR 168VFBGA |
|
| M58WR064ET70ZB6T | STMicroelectronics | IC FLASH 64MBIT PARALLEL 56VFBGA |
|
| MT53B1G32D4NQ-062 WT:D | Micron Technology | LPDDR4 32G 1GX32 FBGA QDP |
|
| M29W064FT6AZA6E | Micron Technology | IC FLASH 64MBIT PARALLEL 48TFBGA |
|
| MT53B768M64D8BV-062 WT ES:B | Micron Technology | IC DRAM 48GBIT 1600MHZ FBGA |
|
| S99MS02G10019 | SkyHigh Memory Limited | IC GATE NAND |
|
| X28HC256WC6721 | Intersil (Renesas Electronics America) | IC EEPROM 256KBIT PARALLEL |
|
| M29F400BB70M6E | Micron Technology | IC FLASH 4MBIT PARALLEL 44SO |
|
| 315-1345-000 | Cypress Semiconductor | IC FLASH NOR |
|
| MT29KZZZ6D4AGLDM-5 W.6N4 | Micron Technology | IC FLASH 38G MLC DDR |
|
| 7130SA55TFI/2703 | Renesas Electronics America | IC SRAM 8KBIT PARALLEL 64TQFP |
|
