MT29E2T08CUHBBM4-3:B TR vs MT29F4T08EUHAFM4-3T:A

This detailed comparison of MT29E2T08CUHBBM4-3:B TR and MT29F4T08EUHAFM4-3T:A in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.

MT29E2T08CUHBBM4-3:B TR

MT29E2T08CUHBBM4-3:B TR

Micron Technology

MT29F4T08EUHAFM4-3T:A

MT29F4T08EUHAFM4-3T:A

Micron Technology

Specifications
Manufacturer Micron Technology Micron Technology
Package / Case - -
Description IC FLASH 2TB PARALLEL 333MHZ IC FLASH 4TB PARALLEL 333MHZ
In Stock 234 877
Mounting Type - -
Part Status Not For New Designs Active
Series - -
Package Tape & Reel (TR) Tray
Memory Type Non-Volatile Non-Volatile
Memory Format FLASH FLASH
Technology FLASH - NAND FLASH - NAND
Memory Size 2Tb (256G x 8) 4Tb (512G x 8)
Memory Interface Parallel Parallel
Clock Frequency 333 MHz 333 MHz
Write Cycle Time - Word, Page - -
Access Time - -
Voltage - Supply 2.5V ~ 3.6V 2.5V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA) 0°C ~ 70°C (TA)
Supplier Device Package - -
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