MT41K256M16TW-107 XIT:P vs MT41K64M16TW-107 AUT:J TR

This detailed comparison of MT41K256M16TW-107 XIT:P and MT41K64M16TW-107 AUT:J TR in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.

MT41K256M16TW-107 XIT:P

MT41K256M16TW-107 XIT:P

Micron Technology

MT41K64M16TW-107 AUT:J TR

MT41K64M16TW-107 AUT:J TR

Micron Technology

Specifications
Manufacturer Micron Technology Micron Technology
Package / Case 96-TFBGA 96-TFBGA
Description IC DRAM 4GBIT PARALLEL 96FBGA IC DRAM 1GBIT PARALLEL 96FBGA
In Stock 240 414
Mounting Type Surface Mount Surface Mount
Part Status Active Active
Series - Automotive, AEC-Q100
Package Tray Tape & Reel (TR)
Memory Type Volatile Volatile
Memory Format DRAM DRAM
Technology SDRAM - DDR3L SDRAM - DDR3L
Memory Size 4Gb (256M x 16) 1Gb (64M x 16)
Memory Interface Parallel Parallel
Clock Frequency 933 MHz 933 MHz
Write Cycle Time - Word, Page - -
Access Time 20 ns 20 ns
Voltage - Supply 1.283V ~ 1.45V 1.283V ~ 1.45V
Operating Temperature -40°C ~ 95°C (TC) -40°C ~ 125°C (TC)
Supplier Device Package 96-FBGA (8x14) 96-FBGA (8x14)
Part Number Manufacturer Description Request For Quote
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71V65603S100BQ Renesas Electronics America IC SRAM 9MBIT PARALLEL 165CABGA
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IS34ML01G084-TLI ISSI (Integrated Silicon Solution, Inc.) IC FLASH 1GBIT PARALLEL 48TSOP
S29GL064N90TFI010 Cypress Semiconductor IC FLASH 64MBIT PARALLEL 56TSOP
71V321L25TFGI Renesas Electronics America IC SRAM 16KBIT PARALLEL 64TQFP
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