This detailed comparison of MT44K32M36RCT-125:A TR and MT44K64M18RCT-125E:A TR in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.
| Manufacturer | Micron Technology | Micron Technology |
|---|---|---|
| Package / Case | 168-LBGA | 168-LBGA |
| Description | IC RLDRAM 1.125GBIT PAR 168BGA | IC RLDRAM 1.125GBIT TBGA |
| In Stock | 750 | 832 |
| Mounting Type | Surface Mount | Surface Mount |
| Part Status | Obsolete | Obsolete |
| Series | - | - |
| Package | Tape & Reel (TR) | Tape & Reel (TR) |
| Memory Type | Volatile | Volatile |
| Memory Format | DRAM | DRAM |
| Technology | RLDRAM 3 | RLDRAM 3 |
| Memory Size | 1.125Gb (32Mb x 36) | 1.125Gb (64Mb x 18) |
| Memory Interface | Parallel | Parallel |
| Clock Frequency | 800 MHz | 800 MHz |
| Write Cycle Time - Word, Page | - | - |
| Access Time | 12 ns | 12 ns |
| Voltage - Supply | 1.28V ~ 1.42V | 1.28V ~ 1.42V |
| Operating Temperature | 0°C ~ 95°C (TC) | 0°C ~ 95°C (TC) |
| Supplier Device Package | 168-BGA (13.5x13.5) | 168-BGA (13.5x13.5) |
| Part Number | Manufacturer | Description | Request For Quote |
|---|---|---|---|
| 11AA040-I/W16K | Roving Networks / Microchip Technology | IC EEPROM 4KBIT SINGLE WIRE DIE |
|
| MTFC32GALAHAM-WT TR | Micron Technology | IC FLASH 256GBIT MMC 153VFBGA |
|
| AK93C65AF | Asahi Kasei Microdevices / AKM Semiconductor | IC EEPROM 4KBIT SPI 8SOP |
|
| S99-50339 | Cypress Semiconductor | IC GATE NOR |
|
| 7006L55J8 | Renesas Electronics America | IC SRAM 128KBIT PARALLEL 68PLCC |
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| M27C1001-45XC1 | STMicroelectronics | IC EPROM 1MBIT PARALLEL 32PLCC |
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| S99FL512SAGMFIR10 | Cypress Semiconductor | IC FLASH NOR 16SOIC |
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| 70V9359L12PF8 | Renesas Electronics America | IC SRAM 144K PARALLEL 100TQFP |
|
| S29WS128N0PBAW010 | Cypress Semiconductor | IC MEMORY NOR |
|
| MTFC64GJVDN-3M WT | Micron Technology | IC FLASH 512GBIT MMC 169LFBGA |
|
| 70V05L20J8 | Renesas Electronics America | IC SRAM 64KBIT PARALLEL 68PLCC |
|
| DSHB1Q01+T10 | Maxim Integrated | IC MEMORY |
|
| MT49H32M18BM-33:B TR | Micron Technology | IC DRAM 576MBIT PARALLEL 144UBGA |
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| IS46TR16512AL-15HBLA2-TR | ISSI (Integrated Silicon Solution, Inc.) | IC DRAM 8GBIT PARALLEL 96LFBGA |
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| M29W128GL7AZA6E | Micron Technology | IC FLASH 128MBIT PARALLEL 64TBGA |
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