This detailed comparison of MT46V128M4CY-5B:J and MT46V64M8CY-5B AIT:J in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.
| Manufacturer | Micron Technology | Micron Technology |
|---|---|---|
| Package / Case | 60-TFBGA | 60-TFBGA |
| Description | IC DRAM 512MBIT PARALLEL 60FBGA | IC DRAM 512MBIT PARALLEL 60FBGA |
| In Stock | 476 | 166 |
| Mounting Type | Surface Mount | Surface Mount |
| Part Status | Obsolete | Active |
| Series | - | Automotive, AEC-Q100 |
| Package | Tray | Bulk |
| Memory Type | Volatile | Volatile |
| Memory Format | DRAM | DRAM |
| Technology | SDRAM - DDR | SDRAM - DDR |
| Memory Size | 512Mb (128M x 4) | 512Mb (64M x 8) |
| Memory Interface | Parallel | Parallel |
| Clock Frequency | 200 MHz | 200 MHz |
| Write Cycle Time - Word, Page | 15ns | 15ns |
| Access Time | 700 ps | 700 ps |
| Voltage - Supply | 2.5V ~ 2.7V | 2.5V ~ 2.7V |
| Operating Temperature | 0°C ~ 70°C (TA) | -40°C ~ 85°C (TA) |
| Supplier Device Package | 60-FBGA (8x12.5) | 60-FBGA (8x12.5) |
| Part Number | Manufacturer | Description | Request For Quote |
|---|---|---|---|
| MT47H256M4CF-25E:H TR | Micron Technology | IC DRAM 1GBIT PARALLEL 60FBGA |
|
| DS1345BL-70 | Maxim Integrated | IC NVSRAM 1MBIT PARALLEL 34LPM |
|
| SST26VF064B-104I/WF70S | Roving Networks / Microchip Technology | IC FLASH 64MBIT SPI/QUAD WAFER |
|
| M29F400FT55M32 | Micron Technology | IC FLASH 4MBIT PARALLEL 44SO |
|
| 25AA256/S16K | Roving Networks / Microchip Technology | IC EEPROM 256KBIT SPI 10MHZ DIE |
|
| PF38F3050M0Y0CEB TR | Micron Technology | IC FLASH 192M |
|
| S29GL01GS10SFI020 | Cypress Semiconductor | IC FLASH 1GBIT PARALLEL |
|
| IDT71T016SA20BF8 | Renesas Electronics America | IC SRAM 1MBIT PARALLEL 48CABGA |
|
| MT29F3T08EQHBBG2-3R:B TR | Micron Technology | IC FLASH 3TB PARALLEL 272TBGA |
|
| MT53D4DBBP-DC TR | Micron Technology | SPECIAL/CUSTOM LPDDR4 |
|
| MT29F256G08AUCABH3-10:A | Micron Technology | IC FLASH 256GBIT PAR 100LBGA |
|
| MT29F3T08EUHBBM4-3R:B | Micron Technology | IC FLASH 3TB PARALLEL 333MHZ |
|
| IS62WV102416ALL-35MI | ISSI (Integrated Silicon Solution, Inc.) | IC SRAM 16MBIT PAR 48MINIBGA |
|
| DS1245XP-70IND+ | Maxim Integrated | IC NVSRAM 1MBIT PCM MODULE |
|
| 24CS512-E/SN | Roving Networks / Microchip Technology | 512K 3.4MHZ I2C SERIAL EEPROM |
|
