This detailed comparison of MT47H64M16NF-25E AUT:M TR and MT47H64M16NF-25E XIT:M in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.
| Manufacturer | Micron Technology | Micron Technology |
|---|---|---|
| Package / Case | 84-TFBGA | 84-TFBGA |
| Description | IC DRAM 1GBIT PARALLEL 84FBGA | IC DRAM 1GBIT PARALLEL 84FBGA |
| In Stock | 900 | 809 |
| Mounting Type | Surface Mount | Surface Mount |
| Part Status | Obsolete | Active |
| Series | Automotive, AEC-Q100 | - |
| Package | Tape & Reel (TR) | Bulk |
| Memory Type | Volatile | Volatile |
| Memory Format | DRAM | DRAM |
| Technology | SDRAM - DDR2 | SDRAM - DDR2 |
| Memory Size | 1Gb (64M x 16) | 1Gb (64M x 16) |
| Memory Interface | Parallel | Parallel |
| Clock Frequency | 400 MHz | 400 MHz |
| Write Cycle Time - Word, Page | 15ns | 15ns |
| Access Time | 400 ps | 400 ps |
| Voltage - Supply | 1.7V ~ 1.9V | 1.7V ~ 1.9V |
| Operating Temperature | -40°C ~ 125°C (TC) | -40°C ~ 95°C (TC) |
| Supplier Device Package | 84-FBGA (8x12.5) | 84-FBGA (8x12.5) |
| Part Number | Manufacturer | Description | Request For Quote |
|---|---|---|---|
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|
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|
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| S30ML01GP50TFI510 | Cypress Semiconductor | IC FLASH MEMORY 48TSOP |
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| MT29F128G08AUCBBH3-12IT:B | Micron Technology | IC FLASH 128GBIT PAR 100LBGA |
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| MT53B512M16D1Z11MWC1 | Micron Technology | LPDDR4 8G DIE 512MX16 |
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| PC28F256G18FF TR | Micron Technology | IC FLASH 256MBIT PAR 64EASYBGA |
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| DS28E05X+U | Maxim Integrated | IC EEPROM 896B 1-WIRE 4WLP |
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| DS28E01G-033-1A+T | Maxim Integrated | INTEGRATED CIRCUIT |
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| MT53D512M64D4NW-053 WT ES:E | Micron Technology | IC DRAM 32GBIT 1866MHZ 432VFBGA |
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