This detailed comparison of MT53B256M32D1GZ-062 WT ES:B TR and MT53B256M32D1GZ-062 WT:B in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.
| Manufacturer | Micron Technology | Micron Technology |
|---|---|---|
| Package / Case | 200-WFBGA | 200-WFBGA |
| Description | IC DRAM 8GBIT 1600MHZ 200WFBGA | IC DRAM 8GBIT 1600MHZ 200WFBGA |
| In Stock | 368 | 190 |
| Mounting Type | Surface Mount | Surface Mount |
| Part Status | Obsolete | Obsolete |
| Series | - | - |
| Package | Tape & Reel (TR) | Tray |
| Memory Type | Volatile | Volatile |
| Memory Format | DRAM | DRAM |
| Technology | SDRAM - Mobile LPDDR4 | SDRAM - Mobile LPDDR4 |
| Memory Size | 8Gb (256M x 32) | 8Gb (256M x 32) |
| Memory Interface | - | - |
| Clock Frequency | 1.6 GHz | 1.6 GHz |
| Write Cycle Time - Word, Page | - | - |
| Access Time | - | - |
| Voltage - Supply | 1.1V | 1.1V |
| Operating Temperature | -30°C ~ 85°C (TC) | -30°C ~ 85°C (TC) |
| Supplier Device Package | 200-WFBGA (11x14.5) | 200-WFBGA (11x14.5) |
| Part Number | Manufacturer | Description | Request For Quote |
|---|---|---|---|
| MT29F2T08CWCBBJ7-6R:B TR | Micron Technology | IC FLASH 2TB PARALLEL 152LBGA |
|
| K770022CF0C000 | Cypress Semiconductor | IC MEMORY FLASH NOR |
|
| MT29F8G08ABCBBH1-12:B | Micron Technology | IC FLASH 8GBIT PARALLEL 100VBGA |
|
| MT44K16M36RB-107E IT:B | Micron Technology | IC DRAM 576MBIT PARALLEL 168BGA |
|
| S29WS128N0SBAW010 | Cypress Semiconductor | IC MEMORY NOR |
|
| W978H6KBQX2E | Winbond Electronics Corporation | IC DRAM 256MBIT PAR 168WFBGA |
|
| CG8426AAT | Cypress Semiconductor | IC SRAM SMD |
|
| MT53B256M32D1NK-062 XT ES:C TR | Micron Technology | IC DRAM 8GBIT 1600MHZ FBGA |
|
| EDW2032BBBG-6A-F-R TR | Micron Technology | IC RAM 2GBIT PARALLEL 170FBGA |
|
| MT49H32M18BM-18:B TR | Micron Technology | IC DRAM 576MBIT PARALLEL 144UBGA |
|
| MT46V64M8BN-6 IT:F | Micron Technology | IC DRAM 512MBIT PARALLEL 60FBGA |
|
| CAT25160VP2IGT3C | Sanyo Semiconductor/ON Semiconductor | IC EEPROM 16KB SER SPI 8SOIC |
|
| MT53D512M64D4RQ-053 WT ES:E | Micron Technology | IC DRAM 32GBIT 1866MHZ 556WFBGA |
|
| 25AA080D-I/S16K | Roving Networks / Microchip Technology | IC EEPROM 8KBIT SPI 10MHZ DIE |
|
| DS28E01P-001-11+ | Maxim Integrated | IC EEPROM |
|
