This detailed comparison of MT53D512M32D2NP-062 WT ES:D and MT53B512M32D2NP-062 WT:D in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.
| Manufacturer | Micron Technology | Micron Technology |
|---|---|---|
| Package / Case | 200-WFBGA | 200-WFBGA |
| Description | IC DRAM 16GBIT 1600MHZ 200WFBGA | IC DRAM 16GBIT 1600MHZ 200WFBGA |
| In Stock | 460 | 431 |
| Mounting Type | Surface Mount | Surface Mount |
| Part Status | Obsolete | Obsolete |
| Series | - | - |
| Package | Tray | Tray |
| Memory Type | Volatile | Volatile |
| Memory Format | DRAM | DRAM |
| Technology | SDRAM - Mobile LPDDR4 | SDRAM - Mobile LPDDR4 |
| Memory Size | 16Gb (512M x 32) | 16Gb (512M x 32) |
| Memory Interface | - | - |
| Clock Frequency | 1.6 GHz | 1.6 GHz |
| Write Cycle Time - Word, Page | - | - |
| Access Time | - | - |
| Voltage - Supply | 1.1V | 1.1V |
| Operating Temperature | -30°C ~ 85°C (TC) | -30°C ~ 85°C (TC) |
| Supplier Device Package | 200-WFBGA (10x14.5) | 200-WFBGA (10x14.5) |
| Part Number | Manufacturer | Description | Request For Quote |
|---|---|---|---|
| 25CS640-I/MS | Roving Networks / Microchip Technology | IC MEMORY EEPROM 64MB SPI |
|
| MT53D512M64D8TZ-053 WT:B | Micron Technology | IC DRAM 32GBIT 1866MHZ |
|
| DS2227-100 | Maxim Integrated | IC NVSRAM 4MBIT PARALLEL 72SIMM |
|
| CG8606AAT | Cypress Semiconductor | IC SRAM SYNC 100TQFP |
|
| MT40A512M8RH-075E AIT:B | Micron Technology | IC DRAM 4GBIT PARALLEL 78FBGA |
|
| MT29F1T08CUCABH8-6:A | Micron Technology | IC FLASH 1TB PARALLEL 152LBGA |
|
| EDF8164A3MC-GD-F-R TR | Micron Technology | IC DRAM 8GBIT PARALLEL 800MHZ |
|
| MT47H128M8CF-187E:H TR | Micron Technology | IC DRAM 1GBIT PARALLEL 60FBGA |
|
| MT29F64G08CBABBWP-12:B TR | Micron Technology | IC FLASH 64GBIT PAR 48TSOP I |
|
| MT29F128G08EBCDBJ4-5M:D TR | Micron Technology | IC FLASH 128GBIT PARALLEL 200MHZ |
|
| S99GL01GS0030 | Cypress Semiconductor | IC FLASH |
|
| M58WR064KU70ZA6F TR | Micron Technology | IC FLASH 64MBIT PARALLEL 88VFBGA |
|
| S34ML08G201TFA003 | SkyHigh Memory Limited | IC FLASH 8G PARALLEL |
|
| 7143SA25JI8 | Renesas Electronics America | IC SRAM 32KBIT PARALLEL 68PLCC |
|
| 7006L35PFI8 | Renesas Electronics America | IC SRAM 128KBIT PARALLEL 64TQFP |
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