MT53D512M64D4CR-053 WT:D TR vs MT53D512M64D8TZ-053 WT:B

This detailed comparison of MT53D512M64D4CR-053 WT:D TR and MT53D512M64D8TZ-053 WT:B in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.

MT53D512M64D4CR-053 WT:D TR

MT53D512M64D4CR-053 WT:D TR

Micron Technology

MT53D512M64D8TZ-053 WT:B

MT53D512M64D8TZ-053 WT:B

Micron Technology

Specifications
Manufacturer Micron Technology Micron Technology
Package / Case - -
Description IC DRAM 32GBIT 1866MHZ IC DRAM 32GBIT 1866MHZ
In Stock 740 125
Mounting Type - -
Part Status Active Active
Series - -
Package Tape & Reel (TR) Tray
Memory Type Volatile Volatile
Memory Format DRAM DRAM
Technology SDRAM - Mobile LPDDR4 SDRAM - Mobile LPDDR4
Memory Size 32Gb (512M x 64) 32Gb (512M x 64)
Memory Interface - -
Clock Frequency 1.866 GHz 1.866 GHz
Write Cycle Time - Word, Page - -
Access Time - -
Voltage - Supply 1.1V 1.1V
Operating Temperature -30°C ~ 85°C (TC) -30°C ~ 85°C (TC)
Supplier Device Package - -
Part Number Manufacturer Description Request For Quote
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MT53B512M32D2NP-062 WT ES:C Micron Technology IC DRAM 16GBIT 1600MHZ 200WFBGA
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70914S15J Renesas Electronics America IC SRAM 36KBIT PARALLEL 68PLCC
M29F160FB5KN3E2 Micron Technology IC FLASH 16MBIT 48TSOP
AT49BV322AT-70CI Roving Networks / Microchip Technology IC FLASH 32MBIT PARALLEL 48CBGA
MT53D512M32D2NP-062 WT ES:D Micron Technology IC DRAM 16GBIT 1600MHZ 200WFBGA
25CS640-I/MS Roving Networks / Microchip Technology IC MEMORY EEPROM 64MB SPI
DS2227-100 Maxim Integrated IC NVSRAM 4MBIT PARALLEL 72SIMM
CG8606AAT Cypress Semiconductor IC SRAM SYNC 100TQFP
MT40A512M8RH-075E AIT:B Micron Technology IC DRAM 4GBIT PARALLEL 78FBGA
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