This detailed comparison of MT53D512M64D4RQ-046 WT ES:E TR and MT53D512M64D4RQ-053 WT ES:E in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.
| Manufacturer | Micron Technology | Micron Technology |
|---|---|---|
| Package / Case | 556-WFBGA | 556-WFBGA |
| Description | IC DRAM 32GBIT 2133MHZ 556WFBGA | IC DRAM 32GBIT 1866MHZ 556WFBGA |
| In Stock | 425 | 942 |
| Mounting Type | Surface Mount | Surface Mount |
| Part Status | Active | Active |
| Series | - | - |
| Package | Tape & Reel (TR) | Tray |
| Memory Type | Volatile | Volatile |
| Memory Format | DRAM | DRAM |
| Technology | SDRAM - Mobile LPDDR4 | SDRAM - Mobile LPDDR4 |
| Memory Size | 32Gb (512M x 64) | 32Gb (512M x 64) |
| Memory Interface | - | - |
| Clock Frequency | 2.133 GHz | 1.866 GHz |
| Write Cycle Time - Word, Page | - | - |
| Access Time | - | - |
| Voltage - Supply | 1.1V | 1.1V |
| Operating Temperature | -30°C ~ 85°C (TC) | -30°C ~ 85°C (TC) |
| Supplier Device Package | 556-WFBGA (12.4x12.4) | 556-WFBGA (12.4x12.4) |
| Part Number | Manufacturer | Description | Request For Quote |
|---|---|---|---|
| 70V9389L7PF8 | Renesas Electronics America | IC SRAM 1.125MBIT PAR 100TQFP |
|
| MT61M256M32JE-12 N:A TR | Micron Technology | IC RAM 8GBIT PARALLEL 180FBGA |
|
| 70V05L35J | Renesas Electronics America | IC SRAM 64KBIT PARALLEL 68PLCC |
|
| MT29RZ4B2DZZHHTB-18I.80F | Micron Technology | IC FLASH RAM 4GBIT PAR 162VFBGA |
|
| M29F800FB5AM6F2 TR | Micron Technology | IC FLASH 8MBIT PARALLEL 44SO |
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| MT53D1G64D8NW-062 WT ES:D TR | Micron Technology | LPDDR4 64G 1GX64 FBGA 8DP |
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| CAT25020VI-GT3D | Sanyo Semiconductor/ON Semiconductor | IC EEPROM 2KBIT SPI 8SOIC |
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| NAND512R3A2SE06 | Micron Technology | IC FLASH 512MBIT PARALLEL |
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| PC28F256G18AF TR | Micron Technology | IC FLASH 256MBIT PAR 64EASYBGA |
|
| W631GG6KS-12 TR | Winbond Electronics Corporation | IC SDRAM 1GBIT 96BGA |
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| MTFC4GLYAM-WT TR | Micron Technology | IC FLASH 32GBIT MMC 153VFBGA |
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| MT48LC16M8A2BB-6A AAT:L TR | Micron Technology | IC DRAM 128MBIT PARALLEL 60FBGA |
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| CG8317AAT | Cypress Semiconductor | IC SRAM MICROPOWER 32SOIC |
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| 24AA256-I/S16K | Roving Networks / Microchip Technology | IC EEPROM 256KBIT I2C 400KHZ DIE |
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| MT53D384M16D1NP-046 XT ES:D | Micron Technology | LPDDR4 6G 384MX16 FBGA |
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