This detailed comparison of MT53D512M64D4RQ-053 WT ES:E TR and MT53D512M64D4RQ-053 WT:E in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.
| Manufacturer | Micron Technology | Micron Technology |
|---|---|---|
| Package / Case | 556-WFBGA | 556-WFBGA |
| Description | IC DRAM 32GBIT 1866MHZ 556WFBGA | IC DRAM 32GBIT 1866MHZ 556WFBGA |
| In Stock | 204 | 126 |
| Mounting Type | Surface Mount | Surface Mount |
| Part Status | Active | Active |
| Series | - | - |
| Package | Tape & Reel (TR) | Tray |
| Memory Type | Volatile | Volatile |
| Memory Format | DRAM | DRAM |
| Technology | SDRAM - Mobile LPDDR4 | SDRAM - Mobile LPDDR4 |
| Memory Size | 32Gb (512M x 64) | 32Gb (512M x 64) |
| Memory Interface | - | - |
| Clock Frequency | 1.866 GHz | 1.866 GHz |
| Write Cycle Time - Word, Page | - | - |
| Access Time | - | - |
| Voltage - Supply | 1.1V | 1.1V |
| Operating Temperature | -30°C ~ 85°C (TC) | -30°C ~ 85°C (TC) |
| Supplier Device Package | 556-WFBGA (12.4x12.4) | 556-WFBGA (12.4x12.4) |
| Part Number | Manufacturer | Description | Request For Quote |
|---|---|---|---|
| IS61NVF25672-6.5B1I | ISSI (Integrated Silicon Solution, Inc.) | IC SRAM 18MBIT PARALLEL 209LFBGA |
|
| 24CS512T-I/SN | Roving Networks / Microchip Technology | 512K 3.4MHZ I2C SERIAL EEPROM |
|
| MT41K2G4RKB-107 C:N TR | Micron Technology | IC DRAM 8GBIT PARALLEL 78FBGA |
|
| MT29F128G08AEEBBH6-12:B | Micron Technology | IC FLASH 128GBIT PAR 152VBGA |
|
| CG8588AAT | Cypress Semiconductor | IC MICROPOWER SRAM 48VFBGA |
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| MT46H1DBB5-DC | Micron Technology | IC MOBILE DDR 512M NAX16 FBGA |
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| CG8136AMT | Cypress Semiconductor | IC SRAM ASYNC |
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| MT41J256M4JP-15E:G | Micron Technology | IC DRAM 1GBIT PARALLEL 78FBGA |
|
| MT29F512G08EMCBBJ5-6:B | Micron Technology | IC FLASH 512GBIT PARALLEL 167MHZ |
|
| W978H2KBQX2E | Winbond Electronics Corporation | IC DRAM 256MBIT PAR 168WFBGA |
|
| PC28F064M29EWLX | Micron Technology | IC FLASH 64MBIT PARALLEL 64FBGA |
|
| MT29C4G96MAAHBACKD-5 WT | Micron Technology | IC FLASH RAM 4GBIT PAR 137VFBGA |
|
| 70V9269L7PF | Renesas Electronics America | IC SRAM 256KBIT PARALLEL 100TQFP |
|
| MT41K128M16JT-107G:K | Micron Technology | IC DRAM 2GBIT PARALLEL 96FBGA |
|
| NAND256W3A2BN6F TR | Micron Technology | IC FLASH 256MBIT PARALLEL 48TSOP |
|
