MT53E256M32D2DS-053 AAT:B TR vs MT53E256M32D2DS-053 AAT:B

This detailed comparison of MT53E256M32D2DS-053 AAT:B TR and MT53E256M32D2DS-053 AAT:B in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.

MT53E256M32D2DS-053 AAT:B TR

MT53E256M32D2DS-053 AAT:B TR

Micron Technology

MT53E256M32D2DS-053 AAT:B

MT53E256M32D2DS-053 AAT:B

Micron Technology

Specifications
Manufacturer Micron Technology Micron Technology
Package / Case 200-WFBGA 200-WFBGA
Description IC DRAM 8GBIT 1.866GHZ 200WFBGA IC DRAM 8GBIT 1.866GHZ 200WFBGA
In Stock 518 872
Mounting Type Surface Mount Surface Mount
Part Status Active Active
Series Automotive, AEC-Q100 Automotive, AEC-Q100
Package Tape & Reel (TR) Tray
Memory Type Volatile Volatile
Memory Format DRAM DRAM
Technology SDRAM - Mobile LPDDR4 SDRAM - Mobile LPDDR4
Memory Size 8Gb (256M x 32) 8Gb (256M x 32)
Memory Interface - -
Clock Frequency 1.866 GHz 1.866 GHz
Write Cycle Time - Word, Page - -
Access Time - -
Voltage - Supply 1.1V 1.1V
Operating Temperature -40°C ~ 105°C (TC) -40°C ~ 105°C (TC)
Supplier Device Package 200-WFBGA (10x14.5) 200-WFBGA (10x14.5)
Part Number Manufacturer Description Request For Quote
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