This detailed comparison of MT53E2G32D8QD-046 WT:E and MT53D1536M32D6BE-046 WT:D in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.
| Manufacturer | Micron Technology | Micron Technology |
|---|---|---|
| Package / Case | - | - |
| Description | LPDDR4 64G 2GX32 FBGA WT 8DP | IC DRAM 48G 2133MHZ FBGA |
| In Stock | 702 | 589 |
| Mounting Type | - | - |
| Part Status | Active | Active |
| Series | - | - |
| Package | Box | Bulk |
| Memory Type | Volatile | Volatile |
| Memory Format | DRAM | DRAM |
| Technology | SDRAM - Mobile LPDDR4 | SDRAM - Mobile LPDDR4 |
| Memory Size | 64Gb (2G x 32) | 48Gb (1.5G x 32) |
| Memory Interface | - | - |
| Clock Frequency | 2.133 GHz | 2.133 GHz |
| Write Cycle Time - Word, Page | - | - |
| Access Time | - | - |
| Voltage - Supply | 1.1V | 1.1V |
| Operating Temperature | -30°C ~ 85°C (TC) | -30°C ~ 85°C (TC) |
| Supplier Device Package | - | - |
| Part Number | Manufacturer | Description | Request For Quote |
|---|---|---|---|
| CH393-80022 | Cypress Semiconductor | IC FLASH NOR |
|
| EDW4032BABG-50-F-D | Micron Technology | IC RAM 4GBIT PARALLEL 170FBGA |
|
| S99-50248D | Cypress Semiconductor | IC GATE NOR |
|
| MT29F512G08CUCABH3-12IT:A | Micron Technology | IC FLASH 512GBIT PAR 100LBGA |
|
| 93LC66C-I/W15K | Roving Networks / Microchip Technology | IC EEPROM 4KBIT SPI 3MHZ DIE |
|
| M29W640GB70N3E | Micron Technology | IC FLASH 64MBIT PARALLEL 48TSOP |
|
| MTFC64GAPALNA-AIT | Micron Technology | EMMC 512GBIT MMC5.1 J58X AT |
|
| S99JL032J0160 | Cypress Semiconductor | IC FLASH |
|
| CQ191-80056 | Cypress Semiconductor | IC FLASH NOR |
|
| MT46H1DAMA-DC | Micron Technology | IC MOBILE DDR 1G 32MX32 FBGA |
|
| MT53D512M64D4RQ-053 WT ES:E TR | Micron Technology | IC DRAM 32GBIT 1866MHZ 556WFBGA |
|
| IS61NVF25672-6.5B1I | ISSI (Integrated Silicon Solution, Inc.) | IC SRAM 18MBIT PARALLEL 209LFBGA |
|
| 24CS512T-I/SN | Roving Networks / Microchip Technology | 512K 3.4MHZ I2C SERIAL EEPROM |
|
| MT41K2G4RKB-107 C:N TR | Micron Technology | IC DRAM 8GBIT PARALLEL 78FBGA |
|
| MT29F128G08AEEBBH6-12:B | Micron Technology | IC FLASH 128GBIT PAR 152VBGA |
|
