MT53E384M64D4NK-046 WT:E vs MT53D256M64D4NY-046 XT:B

This detailed comparison of MT53E384M64D4NK-046 WT:E and MT53D256M64D4NY-046 XT:B in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.

MT53E384M64D4NK-046 WT:E

Micron Technology

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MT53D256M64D4NY-046 XT:B

Micron Technology

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Specifications Hide identical items

Manufacturer	Micron Technology	Micron Technology
Package / Case	-	-
Description	LPDDR4 24G 384MX64 FBGA QDP	IC DRAM 16GBIT 2133MHZ
In Stock	623	269
Mounting Type	-	-
Part Status	Active	Active
Series	-	-
Package	Tray	Tray
Memory Type	Volatile	Volatile
Memory Format	DRAM	DRAM
Technology	SDRAM - Mobile LPDDR4	SDRAM - Mobile LPDDR4
Memory Size	24Gb (384M x 64)	16Gb (256M x 64)
Memory Interface	-	-
Clock Frequency	2.133 GHz	2.133 GHz
Write Cycle Time - Word, Page	-	-
Access Time	-	-
Voltage - Supply	1.1V	1.1V
Operating Temperature	-30°C ~ 85°C (TC)	-30°C ~ 105°C (TC)
Supplier Device Package	-	-