This detailed comparison of N25Q256A11E1240E and N25Q512A83G12A0F in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.
| Manufacturer | Micron Technology | Micron Technology |
|---|---|---|
| Package / Case | 24-TBGA | 24-TBGA |
| Description | IC FLASH 256MBIT SPI 24TPBGA | IC FLASH 512MBIT SPI 24TPBGA |
| In Stock | 247 | 475 |
| Mounting Type | Surface Mount | Surface Mount |
| Part Status | Obsolete | Obsolete |
| Series | - | - |
| Package | Tray | Tape & Reel (TR) |
| Memory Type | Non-Volatile | Non-Volatile |
| Memory Format | FLASH | FLASH |
| Technology | FLASH - NOR | FLASH - NOR |
| Memory Size | 256Mb (64M x 4) | 512Mb (128M x 4) |
| Memory Interface | SPI | SPI |
| Clock Frequency | 108 MHz | 108 MHz |
| Write Cycle Time - Word, Page | 8ms, 5ms | 8ms, 5ms |
| Access Time | - | - |
| Voltage - Supply | 1.7V ~ 2V | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) | -40°C ~ 125°C (TA) |
| Supplier Device Package | 24-T-PBGA (6x8) | 24-T-PBGA (6x8) |
| Part Number | Manufacturer | Description | Request For Quote |
|---|---|---|---|
| MT28GU01GAAA2EGC-0SIT | Micron Technology | IC FLASH 1GBIT PARALLEL 64TBGA |
|
| M29F040B70N1T TR | Micron Technology | IC FLASH 4MBIT PARALLEL 32TSOP |
|
| MT29F4G08ABAFAH4-AITES:F TR | Micron Technology | IC FLASH 4GBIT PARALLEL 63VFBGA |
|
| EDFA112A2PF-GD-F-D | Micron Technology | IC DRAM 16GBIT PARALLEL 800MHZ |
|
| MT29F16G08ABCBBH1-12:B TR | Micron Technology | IC FLASH 16GBIT PARALLEL 100VBGA |
|
| MT29F1T08CUCCBH8-6ITR:C TR | Micron Technology | IC FLASH 1TB PARALLEL 152LBGA |
|
| S98WS512N0GFW0090G | Cypress Semiconductor | IC MEMORY NOR |
|
| 70V05L15J | Renesas Electronics America | IC SRAM 64KBIT PARALLEL 68PLCC |
|
| MT53B4DATX-DC | Micron Technology | SPECIAL/CUSTOM LPDDR4 |
|
| MT41K256M16HA-125:E | Micron Technology | IC DRAM 4GBIT PARALLEL 96FBGA |
|
| MT29F512G08CUCDBJ6-6R:D TR | Micron Technology | IC FLASH 512GBIT PAR 132LBGA |
|
| 51-32598Z01-A | Cypress Semiconductor | IC FLASH NOR |
|
| MT42L192M32D3LE-3 IT:A | Micron Technology | IC DRAM 6GBIT PARALLEL 168FBGA |
|
| DS28E01P-BOS+T | Maxim Integrated | IC EEPROM MEMORY 1KB SMD TOSC |
|
| W972GG8JB-18 TR | Winbond Electronics Corporation | IC DRAM 2GBIT PARALLEL 60WBGA |
|
