This detailed comparison of N25Q512A13G1241E and N25Q512A83G1240E in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.
| Manufacturer | Micron Technology | Micron Technology |
|---|---|---|
| Package / Case | 24-TBGA | 24-TBGA |
| Description | IC FLASH 512MBIT SPI 24TPBGA | IC FLASH 512MBIT SPI 24TPBGA |
| In Stock | 500 | 657 |
| Mounting Type | Surface Mount | Surface Mount |
| Part Status | Obsolete | Obsolete |
| Series | - | - |
| Package | Tray | Tray |
| Memory Type | Non-Volatile | Non-Volatile |
| Memory Format | FLASH | FLASH |
| Technology | FLASH - NOR | FLASH - NOR |
| Memory Size | 512Mb (128M x 4) | 512Mb (128M x 4) |
| Memory Interface | SPI | SPI |
| Clock Frequency | 108 MHz | 108 MHz |
| Write Cycle Time - Word, Page | 8ms, 5ms | 8ms, 5ms |
| Access Time | - | - |
| Voltage - Supply | 2.7V ~ 3.6V | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) | -40°C ~ 85°C (TA) |
| Supplier Device Package | 24-T-PBGA (6x8) | 24-T-PBGA (6x8) |
| Part Number | Manufacturer | Description | Request For Quote |
|---|---|---|---|
| IDT71V3557SA75BGI8 | Renesas Electronics America | IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
| 25LC320A-E/ST16KVAO | Roving Networks / Microchip Technology | IC EEPROM 32KBIT SPI 8TSSOP |
|
| M25PX64-VZM6TP TR | Micron Technology | IC FLSH 64MBIT SPI 75MHZ 24TPBGA |
|
| 70V9389L7PRF8 | Renesas Electronics America | IC SRAM 1.125MBIT PAR 128TQFP |
|
| IS42SM16160E-75BLI | ISSI (Integrated Silicon Solution, Inc.) | IC DRAM 256MBIT PARALLEL 54TFBGA |
|
| MT40A256M16GE-075E AUT:B TR | Micron Technology | IC DRAM 4GBIT PARALLEL 96FBGA |
|
| 25LC128-E/SN16KVAO | Roving Networks / Microchip Technology | IC EEPROM 128KBIT SPI 5MHZ 8SOIC |
|
| W25Q32JVXGJQ TR | Winbond Electronics Corporation | IC FLASH 32MBIT SPI/QUAD 8XSON |
|
| MT47H128M8SH-187E:M TR | Micron Technology | IC DRAM 1GBIT PARALLEL 60FBGA |
|
| AT25P1024W1-10SI-2.7 | Roving Networks / Microchip Technology | IC EEPROM 1MBIT SPI 20SOIC |
|
| IS42S83200D-75ETLI | ISSI (Integrated Silicon Solution, Inc.) | IC DRAM 256MBIT PAR 54TSOP II |
|
| 25LC640A-E/ST16KVAO | Roving Networks / Microchip Technology | IC EEPROM 64KBIT SPI 8TSSOP |
|
| N01L83W2AT25I | Sanyo Semiconductor/ON Semiconductor | IC SRAM 1MBIT PARALLEL 32TSOP I |
|
| PC48F4400P0VB00B TR | Micron Technology | IC FLASH 512MBIT PAR 64EASYBGA |
|
| IDT71V65703S85PFI | Renesas Electronics America | IC SRAM 9MBIT PARALLEL 100TQFP |
|
