This detailed comparison of N25W064A11EF640E and N25W128A11EF740F TR in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.
| Manufacturer | Micron Technology | Micron Technology |
|---|---|---|
| Package / Case | 8-VDFN Exposed Pad | 8-VDFN Exposed Pad |
| Description | IC FLSH 64MBIT SPI 108MHZ 8VDFPN | IC FLASH 128MBIT SPI 8VDFPN |
| In Stock | 732 | 674 |
| Mounting Type | Surface Mount | Surface Mount |
| Part Status | Obsolete | Obsolete |
| Series | - | - |
| Package | Tray | Tape & Reel (TR) |
| Memory Type | Non-Volatile | Non-Volatile |
| Memory Format | FLASH | FLASH |
| Technology | FLASH - NOR | FLASH - NOR |
| Memory Size | 64Mb (16M x 4) | 128Mb (32M x 4) |
| Memory Interface | SPI | SPI |
| Clock Frequency | 108 MHz | 108 MHz |
| Write Cycle Time - Word, Page | - | - |
| Access Time | - | - |
| Voltage - Supply | 1.7V ~ 2V | 1.7V ~ 2V |
| Operating Temperature | -25°C ~ 85°C (TA) | -25°C ~ 85°C (TA) |
| Supplier Device Package | 8-VDFPN (6x5) (MLP8) | 8-VDFPN (6x5) (MLP8) |
| Part Number | Manufacturer | Description | Request For Quote |
|---|---|---|---|
| MT40A1G16WBU-083E:B TR | Micron Technology | IC DRAM 16GBIT PARALLEL 96FBGA |
|
| AS4C128M8D3-12BINTR | Alliance Memory, Inc. | IC DRAM 1GBIT PARALLEL 78FBGA |
|
| IDT71V65602ZS133BG8 | Renesas Electronics America | IC SRAM 9MBIT PARALLEL 119PBGA |
|
| NAND01GW3B2AZA6E | STMicroelectronics | IC FLASH 1GBIT PARALLEL 63VFBGA |
|
| MT48LC16M16A2BG-7E:D | Micron Technology | IC DRAM 256MBIT PARALLEL 54VFBGA |
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| AT28C256-15TI | Roving Networks / Microchip Technology | IC EEPROM 256KBIT PAR 28TSOP |
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| IS42SM16160D-7BL | ISSI (Integrated Silicon Solution, Inc.) | IC DRAM 256MBIT PARALLEL 54TFBGA |
|
| IS41LV16105B-50TL | ISSI (Integrated Silicon Solution, Inc.) | IC DRAM 16MBIT PAR 44TSOP II |
|
| W632GU6MB09J | Winbond Electronics Corporation | IC DRAM 2GBIT PARALLEL 96VFBGA |
|
| AT49BV160C-70CI | Roving Networks / Microchip Technology | IC FLASH 16MBIT PARALLEL 46CBGA |
|
| IDT71V35761S200BQGI | Renesas Electronics America | IC SRAM 4.5MBIT PAR 165CABGA |
|
| AT24C01A-10SI-1.8-T | Roving Networks / Microchip Technology | IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
| SST39WF800B-70-4I-C2QE | Roving Networks / Microchip Technology | IC FLASH 8MBIT PARALLEL 48XFLGA |
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| MT48H32M16LFB4-75B IT:C | Micron Technology | IC DRAM 512MBIT PARALLEL 54VFBGA |
|
| MT40A256M16GE-083E AUT:B TR | Micron Technology | IC DRAM 4GBIT PARALLEL 96FBGA |
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