This detailed comparison of W9464G6JH-5 and W9425G6KH-5 in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.
| Manufacturer | Winbond Electronics Corporation | Winbond Electronics Corporation |
|---|---|---|
| Package / Case | 66-TSSOP (0.400", 10.16mm Width) | 66-TSSOP (0.400", 10.16mm Width) |
| Description | IC DRAM 64MBIT PAR 66TSOP II | IC DRAM 256MBIT PAR 66TSOP II |
| In Stock | 1 415 | 3 112 |
| Mounting Type | Surface Mount | Surface Mount |
| Part Status | Obsolete | Active |
| Series | - | - |
| Package | Tray | Tray |
| Memory Type | Volatile | Volatile |
| Memory Format | DRAM | DRAM |
| Technology | SDRAM - DDR | SDRAM - DDR |
| Memory Size | 64Mb (4M x 16) | 256Mb (16M x 16) |
| Memory Interface | Parallel | Parallel |
| Clock Frequency | 200 MHz | 200 MHz |
| Write Cycle Time - Word, Page | 15ns | 15ns |
| Access Time | 55 ns | 55 ns |
| Voltage - Supply | 2.3V ~ 2.7V | 2.3V ~ 2.7V |
| Operating Temperature | 0°C ~ 70°C (TA) | 0°C ~ 70°C (TA) |
| Supplier Device Package | 66-TSOP II | 66-TSOP II |
| Part Number | Manufacturer | Description | Request For Quote |
|---|---|---|---|
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|
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|
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|
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|
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| IDT71V25761YSA200BG8 | Renesas Electronics America | IC SRAM 4.5MBIT PARALLEL 119PBGA |
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| 70V9269S9PRFI8 | Renesas Electronics America | IC SRAM 256KBIT PARALLEL 128TQFP |
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| MT29F256G08CJAAAWP:A | Micron Technology | IC FLASH 256GBIT PAR 48TSOP I |
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