SIA477EDJT-T1-GE3

Part No :: SIA477EDJT-T1-GE3

Manufacturer: Vishay / Siliconix

VIGOR # :: 2892018

Description: MOSFET P-CH 12V 12A PPAK SC70-6

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SIA477EDJT-T1-GE3 PDF

Country of origin: -

Date code: -

SIA477EDJT-T1-GE3 Specifications

Type	Description
Series:	TrenchFET® Gen III
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	12 V
Current - Continuous Drain (Id) @ 25°C:	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	13mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	50 nC @ 4.5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	3050 pF @ 6 V
FET Feature:	-
Power Dissipation (Max):	19W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® SC-70-6 Single
Package / Case:	PowerPAK® SC-70-6

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In Stock: 7880

Shipped from

HK warehouse

Expected Shipping Date

Jan 12 - Jan 16 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$0.50~~	~~$0.50~~
3000	~~$0.20~~	~~$586.62~~
6000	~~$0.18~~	~~$1 101.78~~
15000	~~$0.17~~	~~$2 575.65~~
30000	~~$0.16~~	~~$4 900.80~~

Current price of SIA477EDJT-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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SIA477EDJT-T1-GE3

SIA477EDJT-T1-GE3

2892018

Pricing(USD)