SIHG47N65E-GE3

SIHG47N65E-GE3 Specifications

Type	Description
Series:	-
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	47A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	72mOhm @ 24A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	273 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	5682 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	417W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-247AC
Package / Case:	TO-247-3

TT in advance (bank transfer), Credit Card, PayPal can be chosen.
Cash transfer only. (Transfer with checks and bills are not accepted.)
Customer is responsible for paying all possible charges,including sales tax, VAT and customs charges,etc.
If you need the detailed invoice or tax ID,please email us.

FedEx, DHL, and UPS can be selected.
You can select whether to charge shipping fee by your shipping account or to charge by our side.
Please confirm with the logistics company in advance if you are in a remote area. (It may cost extra fees (35-50 USD) for delivery at those areas.)
The shopping cart will automatically calculate the shipping cost.
Delivery time: At the same day (Order deadline is 2pm, HK Time).
Delivery date: usually 2 to 7 working days.
It is unable to appoint a date of delivery.
Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)