SIHB22N60ET5-GE3

Part No :: SIHB22N60ET5-GE3

Manufacturer: Vishay / Siliconix

VIGOR # :: 2897069

Description: MOSFET N-CH 600V 21A TO263

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SIHB22N60ET5-GE3 PDF

Country of origin: -

Date code: -

SIHB22N60ET5-GE3 Specifications

Type	Description
Series:	E
Package:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	86 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	1920 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	227W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-263 (D²Pak)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Delivery date: usually 2 to 7 working days.
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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Jan 31 - Feb 04 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$2.70~~	~~$2.70~~
800	~~$2.53~~	~~$2 026.86~~

Current price of SIHB22N60ET5-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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