Part No :

G2R120MT33J

Manufacturer
GeneSiC Semiconductor
VIGOR # :

2897308

Description
SIC MOSFET N-CH TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
G2R120MT33J PDF
Country of origin
-
Date code
-
ads
Type Description
Series:G2R™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):3300 V
Current - Continuous Drain (Id) @ 25°C:35A
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:156mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:145 nC @ 20 V
Vgs (Max):+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:3706 pF @ 1000 V
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-7
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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Shipped from
HK warehouse
Expected Shipping Date
Jan 02 - Jan 06 2026
Pricing(USD)
Quantity Unit Price Ext. Price
1 $95.63 $95.63

Current price of G2R120MT33J is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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