SISS30ADN-T1-GE3

Part No :: SISS30ADN-T1-GE3

Manufacturer: Vishay / Siliconix

VIGOR # :: 2897497

Description: MOSFET N-CH 80V 15.9A/54.7A PPAK

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SISS30ADN-T1-GE3 PDF

Country of origin: -

Date code: -

SISS30ADN-T1-GE3 Specifications

Type	Description
Series:	TrenchFET® Gen IV
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	80 V
Current - Continuous Drain (Id) @ 25°C:	15.9A (Ta), 54.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	7.5V, 10V
Rds On (Max) @ Id, Vgs:	8.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	30 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1295 pF @ 40 V
FET Feature:	-
Power Dissipation (Max):	4.8W (Ta), 57W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® 1212-8S
Package / Case:	PowerPAK® 1212-8S

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In Stock: 6020

Shipped from

HK warehouse

Expected Shipping Date

Jan 25 - Jan 29 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$1.40~~	~~$1.40~~

Current price of SISS30ADN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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SISS30ADN-T1-GE3

SISS30ADN-T1-GE3

2897497

Pricing(USD)