SIHH26N60E-T1-GE3

Part No :: SIHH26N60E-T1-GE3

Manufacturer: Vishay / Siliconix

VIGOR # :: 2898155

Description: MOSFET N-CH 600V 25A PPAK 8 X 8

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: SIHH26N60E-T1-GE3 PDF

Country of origin: -

Date code: -

SIHH26N60E-T1-GE3 Specifications

Type	Description
Series:	-
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	135mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	116 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	2815 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	202W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® 8 x 8
Package / Case:	8-PowerTDFN

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In Stock: 84

Shipped from

HK warehouse

Expected Shipping Date

Jun 27 - Jul 01 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price
1	~~$5.8800~~	~~$5.88~~
3000	~~$3.0640~~	~~$9 192.15~~

Current price of SIHH26N60E-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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