Part No :

TK10E60W,S1VX

Manufacturer
Toshiba Electronic Devices and Storage Corporation
VIGOR # :

2907667

Description
MOSFET N-CH 600V 9.7A TO220
Catalog
Transistors - FETs, MOSFETs - Single
DataSheet
TK10E60W,S1VX PDF
Country of origin
-
Date code
-
ads
Type Description
Series:DTMOSIV
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id:3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 300 V
FET Feature:Super Junction
Power Dissipation (Max):100W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
  • Please confirm the specifications of the products when ordering.
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  • If you have special order instructions,please note it on the ordering pages.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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Shipped from
HK warehouse
Expected Shipping Date
Feb 01 - Feb 05 2026
Pricing(USD)
Quantity Unit Price Ext. Price
1 $2.92 $2.92
50 $2.35 $117.32
100 $2.14 $213.79
500 $1.73 $865.57
1000 $1.46 $1 460.00

Current price of TK10E60W,S1VX is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com

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