WNSC08650T6J

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Part No :: WNSC08650T6J

Manufacturer: WeEn Semiconductors Co., Ltd

Description: SILICON CARBIDE POWER DIODE

Catalog: Diodes - Rectifiers - Single

Shipped from: HK warehouse

Expected Shipping Date: Nov 12 - Nov 16 2025

DataSheet: WNSC08650T6J PDF

Availability: 3000 pieces

Unit Price: ~~$3.03000~~

Current price of WNSC08650T6J is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@vigor.vom.SG

WNSC08650T6J Specifications

Type	Description
Series:	-
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
Diode Type:	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):	650 V
Current - Average Rectified (Io):	8A
Voltage - Forward (Vf) (Max) @ If:	1.7 V @ 8 A
Speed:	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):	0 ns
Current - Reverse Leakage @ Vr:	50 µA @ 650 V
Capacitance @ Vr, F:	267pF @ 1V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	4-VDFN Exposed Pad
Supplier Device Package:	5-DFN (8x8)
Operating Temperature - Junction:	175°C (Max)

Please confirm the specifications of the products when ordering.
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Delivery time: At the same day (Order deadline is 2pm, HK Time).
Delivery date: usually 2 to 7 working days.
It is unable to appoint a date of delivery.
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