
| Type | Description |
|---|---|
| Series: | - |
| Package: | Tray |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPSDR |
| Memory Size: | 256Mb (8M x 32) |
| Memory Interface: | Parallel |
| Clock Frequency: | 166 MHz |
| Write Cycle Time - Word, Page: | 15ns |
| Access Time: | 5.4 ns |
| Voltage - Supply: | 1.7V ~ 1.95V |
| Operating Temperature: | -25°C ~ 85°C (TC) |
| Mounting Type: | Surface Mount |
| Package / Case: | 90-TFBGA |
| Supplier Device Package: | 90-VFBGA (8x13) |
| Part Number | Manufacturer & Description | Compare |
|---|---|---|
| W988D2FBJX6E TR Match 100% |
Winbond Electronics Corporation
IC DRAM 256MBIT PARALLEL 90VFBGA
|
W988D2FBJX6E vs W988D2FBJX6E TR |
| W988D2FBJX7E TR Match 84% |
Winbond Electronics Corporation
IC DRAM 256MBIT PARALLEL 90VFBGA
|
W988D2FBJX6E vs W988D2FBJX7E TR |
| W988D2FBJX7E Match 84% |
Winbond Electronics Corporation
IC DRAM 256MBIT PARALLEL 90VFBGA
|
W988D2FBJX6E vs W988D2FBJX7E |
| W987D2HBJX6I Match 50% |
Winbond Electronics Corporation
IC DRAM 128MBIT PARALLEL 90VFBGA
|
W988D2FBJX6E vs W987D2HBJX6I |
| W988D2FBJX6I TR Match 100% |
Winbond Electronics Corporation
IC DRAM 256MBIT PARALLEL 90VFBGA
|
W988D2FBJX6E vs W988D2FBJX6I TR |
| W988D2FBJX6I Match 100% |
Winbond Electronics Corporation
IC DRAM 256MBIT PARALLEL 90VFBGA
|
W988D2FBJX6E vs W988D2FBJX6I |
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ||
| 240 |
Current price of W988D2FBJX6E is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com
IC DRAM 512MBIT PARALLEL 54TFBGA
IC EEPROM 8KBIT SPI 10MHZ 8TSSOP
IC FLASH 256MBIT PARALLEL 64FBGA
ASSEMBLYROUND1 POS9.9MM (D)7MM(H
SWITCH TOGGLE 3PST 24A 125V
IC DRAM 256MBIT PARALLEL 90VFBGA
IC FLASH 128MBIT SPI/QUAD 8WSON