2N7635-GA

Part No :: 2N7635-GA

Manufacturer: GeneSiC Semiconductor

VIGOR # :: 4580966

Description: TRANS SJT 650V 4A TO257

Catalog: Transistors - FETs, MOSFETs - Single

DataSheet: 2N7635-GA PDF

Country of origin: -

Date code: -

2N7635-GA Specifications

Type	Description
Series:	-
Package:	Bulk
Part Status:	Obsolete
FET Type:	-
Technology:	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	4A (Tc) (165°C)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	415mOhm @ 4A
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	324 pF @ 35 V
FET Feature:	-
Power Dissipation (Max):	47W (Tc)
Operating Temperature:	-55°C ~ 225°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-257
Package / Case:	TO-257-3

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In Stock: 0

Shipped from

HK warehouse

Expected Shipping Date

Jan 17 - Jan 21 2026

Pricing(USD)

Quantity	Unit Price	Ext. Price

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2N7635-GA

2N7635-GA

4580966

Pricing(USD)