
| Type | Description |
|---|---|
| Series: | Automotive, AEC-Q100 |
| Package: | Tray |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPDDR4 |
| Memory Size: | 8Gb (256M x 32) |
| Memory Interface: | - |
| Clock Frequency: | 2.133 GHz |
| Write Cycle Time - Word, Page: | - |
| Access Time: | - |
| Voltage - Supply: | 1.1V |
| Operating Temperature: | -40°C ~ 105°C (TC) |
| Mounting Type: | Surface Mount |
| Package / Case: | 200-WFBGA |
| Supplier Device Package: | 200-WFBGA (10x14.5) |
| Part Number | Manufacturer & Description | Compare |
|---|---|---|
| MT53E384M32D2DS-046 AUT:E TR Match 79% |
Micron Technology
IC DRAM 12GBIT 2.133GHZ 200WFBGA
|
MT53E256M32D2DS-046 AAT:B vs MT53E384M32D2DS-046 AUT:E TR |
| MT53E128M32D2DS-046 AUT:A TR Match 64% |
Micron Technology
IC DRAM 4GBIT 2.133GHZ 200WFBGA
|
MT53E256M32D2DS-046 AAT:B vs MT53E128M32D2DS-046 AUT:A TR |
| MT53E384M32D2DS-046 AUT:E Match 79% |
Micron Technology
IC DRAM 12GBIT 2.133GHZ 200WFBGA
|
MT53E256M32D2DS-046 AAT:B vs MT53E384M32D2DS-046 AUT:E |
| MT53E256M32D2DS-046 AAT:B TR Match 100% |
Micron Technology
IC DRAM 8GBIT 2.133GHZ 200WFBGA
|
MT53E256M32D2DS-046 AAT:B vs MT53E256M32D2DS-046 AAT:B TR |
| MT53D512M16D1DS-046 AAT:D TR Match 100% |
Micron Technology
IC DRAM 8GBIT 2.133GHZ 200WFBGA
|
MT53E256M32D2DS-046 AAT:B vs MT53D512M16D1DS-046 AAT:D TR |
| MT53D512M16D1DS-046 AAT:D Match 100% |
Micron Technology
IC DRAM 8GBIT 2.133GHZ 200WFBGA
|
MT53E256M32D2DS-046 AAT:B vs MT53D512M16D1DS-046 AAT:D |
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 |
Current price of MT53E256M32D2DS-046 AAT:B is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com
IC EEPROM 1KBIT I2C 100KHZ 8MSOP
IC DRAM 2GBIT PARALLEL 96FBGA
IC SRAM 4.5MBIT PARALLEL 100TQFP
CAP CER MLCC
IC DRAM 8GBIT 2.133GHZ 200WFBGA
RES 22 OHM 5% 1/10W 0603
LASER DIODE 1547NM 2.511MW