
| Type | Description |
|---|---|
| Series: | - |
| Package: | Tray |
| Part Status: | Not For New Designs |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPSDR |
| Memory Size: | 128Mb (8M x 16) |
| Memory Interface: | Parallel |
| Clock Frequency: | 166 MHz |
| Write Cycle Time - Word, Page: | 15ns |
| Access Time: | 5.4 ns |
| Voltage - Supply: | 1.7V ~ 1.95V |
| Operating Temperature: | -25°C ~ 85°C (TC) |
| Mounting Type: | Surface Mount |
| Package / Case: | 54-TFBGA |
| Supplier Device Package: | 54-VFBGA (8x9) |
| Part Number | Manufacturer & Description | Compare |
|---|---|---|
| W988D6FBGX6I Match 50% |
Winbond Electronics Corporation
IC DRAM 256MBIT PARALLEL 54VFBGA
|
W987D6HBGX6E vs W988D6FBGX6I |
| W987D6HBGX6I TR Match 100% |
Winbond Electronics Corporation
IC DRAM 128MBIT PARALLEL 54VFBGA
|
W987D6HBGX6E vs W987D6HBGX6I TR |
| W987D6HBGX7E TR Match 84% |
Winbond Electronics Corporation
IC DRAM 128MBIT PARALLEL 54VFBGA
|
W987D6HBGX6E vs W987D6HBGX7E TR |
| W987D6HBGX6I Match 100% |
Winbond Electronics Corporation
IC DRAM 128MBIT PARALLEL 54VFBGA
|
W987D6HBGX6E vs W987D6HBGX6I |
| W987D6HBGX6E TR Match 100% |
Winbond Electronics Corporation
IC DRAM 128MBIT PARALLEL 54VFBGA
|
W987D6HBGX6E vs W987D6HBGX6E TR |
| W988D6FBGX6I TR Match 50% |
Winbond Electronics Corporation
IC DRAM 256MBIT PARALLEL 54VFBGA
|
W987D6HBGX6E vs W988D6FBGX6I TR |
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ||
| 312 |
Current price of W987D6HBGX6E is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com
IC SRAM 4.5MBIT PAR 165CABGA
IC EEPROM 8KBIT SPI 3MHZ 8DIP
IC SRAM 4MBIT PARALLEL 48VFBGA
IC DRAM 128MBIT PARALLEL 54VFBGA
DC DC CONVERTER 24V 600W
FOAM TS17P000009.017 FOR DR 2 OF
CAP TRIMMER