
| Type | Description |
|---|---|
| Series: | - |
| Package: | Tray |
| Part Status: | Not For New Designs |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND |
| Memory Size: | 3Tb (384G x 8) |
| Memory Interface: | Parallel |
| Clock Frequency: | 333 MHz |
| Write Cycle Time - Word, Page: | - |
| Access Time: | - |
| Voltage - Supply: | 2.5V ~ 3.6V |
| Operating Temperature: | 0°C ~ 70°C (TA) |
| Mounting Type: | - |
| Package / Case: | - |
| Supplier Device Package: | - |
| Part Number | Manufacturer & Description | Compare |
|---|---|---|
| MT29F4T08EUHAFM4-3T:A TR Match 100% |
Micron Technology
IC FLASH 4TB PARALLEL 333MHZ
|
MT29E3T08EUHBBM4-3:B vs MT29F4T08EUHAFM4-3T:A TR |
| MT29F3T08EUCBBM4-37:B TR Match 68% |
Micron Technology
IC FLASH 3TB PARALLEL 267MHZ
|
MT29E3T08EUHBBM4-3:B vs MT29F3T08EUCBBM4-37:B TR |
| MT29F4T08EYCBBG9-37ES:B TR Match 68% |
Micron Technology
IC FLASH 4TB PARALLEL 267MHZ
|
MT29E3T08EUHBBM4-3:B vs MT29F4T08EYCBBG9-37ES:B TR |
| MT29F4T08EYCBBG9-37:B TR Match 68% |
Micron Technology
IC FLASH 4TB PARALLEL 267MHZ
|
MT29E3T08EUHBBM4-3:B vs MT29F4T08EYCBBG9-37:B TR |
| MT29F6T08ETCBBM5-37ES:B TR Match 68% |
Micron Technology
IC FLASH 6TB PARALLEL 267MHZ
|
MT29E3T08EUHBBM4-3:B vs MT29F6T08ETCBBM5-37ES:B TR |
| MT29F3T08EUCBBM4-37ES:B TR Match 68% |
Micron Technology
IC FLASH 3TB PARALLEL 267MHZ
|
MT29E3T08EUHBBM4-3:B vs MT29F3T08EUCBBM4-37ES:B TR |
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ||
| 1120 |
Current price of MT29E3T08EUHBBM4-3:B is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com
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