
| Type | Description |
|---|---|
| Series: | - |
| Package: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NAND (TLC) |
| Memory Size: | 512Gb (64G x 8) |
| Memory Interface: | Parallel |
| Clock Frequency: | 100 MHz |
| Write Cycle Time - Word, Page: | - |
| Access Time: | - |
| Voltage - Supply: | 2.7V ~ 3.6V |
| Operating Temperature: | 0°C ~ 70°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | - |
| Supplier Device Package: | 132-TBGA (12x18) |
| Part Number | Manufacturer & Description | Compare |
|---|---|---|
| MT29F512G08EMCBBJ5-10:B Match 100% |
Micron Technology
IC FLASH 512GBIT PARALLEL 100MHZ
|
MT29F512G08EMCBBJ5-10ES:B TR vs MT29F512G08EMCBBJ5-10:B |
| MT29F512G08EKCBBJ5-6:B Match 63% |
Micron Technology
NAND FLASH
|
MT29F512G08EMCBBJ5-10ES:B TR vs MT29F512G08EKCBBJ5-6:B |
| MT29F512G08EMCBBJ5-10:B TR Match 100% |
Micron Technology
IC FLASH 512GBIT PARALLEL 100MHZ
|
MT29F512G08EMCBBJ5-10ES:B TR vs MT29F512G08EMCBBJ5-10:B TR |
| MT29F512G08EMCBBJ5-6:B Match 63% |
Micron Technology
IC FLASH 512GBIT PARALLEL 167MHZ
|
MT29F512G08EMCBBJ5-10ES:B TR vs MT29F512G08EMCBBJ5-6:B |
| MT29F512G08EMCBBJ5-6:B.001 Match 63% |
Micron Technology
IC FLASH 512GBIT PARALLEL 167MHZ
|
MT29F512G08EMCBBJ5-10ES:B TR vs MT29F512G08EMCBBJ5-6:B.001 |
| Quantity | Unit Price | Ext. Price |
|---|
Current price of MT29F512G08EMCBBJ5-10ES:B TR is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com
IC FLASH 64GBIT PARALLEL 100VBGA
IC DRAM 8GBIT 933MHZ FBGA
IC DRAM 24GBIT PARALLEL 800MHZ
FIXED IND 120NH 519MA 260 MOHM
IC OSC HI PERF LO JITTER 6QFM
50A VR POWER (DRMOS) PLUS 5V PWM
IC FLASH 512GBIT PARALLEL 100MHZ