
| Type | Description |
|---|---|
| Series: | - |
| Package: | Tray |
| Part Status: | Obsolete |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPDDR4 |
| Memory Size: | 24Gb (768M x 32) |
| Memory Interface: | - |
| Clock Frequency: | 1.6 GHz |
| Write Cycle Time - Word, Page: | - |
| Access Time: | - |
| Voltage - Supply: | 1.1V |
| Operating Temperature: | -30°C ~ 85°C (TC) |
| Mounting Type: | - |
| Package / Case: | - |
| Supplier Device Package: | - |
| Part Number | Manufacturer & Description | Compare |
|---|---|---|
| MT53B256M64D2TP-062 L XT ES:C Match 79% |
Micron Technology
IC DRAM 16GBIT 1600MHZ FBGA
|
MT53B768M32D4TT-062 WT:B vs MT53B256M64D2TP-062 L XT ES:C |
| MT53B1G32D4NQ-062 WT:D TR Match 85% |
Micron Technology
LPDDR4 32G 1GX32 FBGA QDP
|
MT53B768M32D4TT-062 WT:B vs MT53B1G32D4NQ-062 WT:D TR |
| MT53B256M64D2NL-062 XT ES:C Match 79% |
Micron Technology
IC DRAM 16GBIT 1600MHZ FBGA
|
MT53B768M32D4TT-062 WT:B vs MT53B256M64D2NL-062 XT ES:C |
| MT53B512M64D4NW-062 WT:C Match 85% |
Micron Technology
IC DRAM 32GBIT 1600MHZ FBGA
|
MT53B768M32D4TT-062 WT:B vs MT53B512M64D4NW-062 WT:C |
| MT53B256M64D2NK-062 WT ES:C Match 79% |
Micron Technology
IC DRAM 16GBIT 1600MHZ FBGA
|
MT53B768M32D4TT-062 WT:B vs MT53B256M64D2NK-062 WT ES:C |
| MT53B256M64D2PX-062 XT ES:C TR Match 79% |
Micron Technology
IC DRAM 16GBIT 1600MHZ FBGA
|
MT53B768M32D4TT-062 WT:B vs MT53B256M64D2PX-062 XT ES:C TR |
| Quantity | Unit Price | Ext. Price |
|---|
Current price of MT53B768M32D4TT-062 WT:B is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com
IC GATE NOR
IC FLASH 1GBIT SPI 133MHZ 8WSON
IC EEPROM 4KBIT I2C 400KHZ DIE
CAP CER 820PF 10V X7R 1206
CAP CER 220PF 100V X7R RADIAL
IC BATT PROT LI-ION 1CELL 6UDFN
IC DRAM 24GBIT 1600MHZ FBGA