
| Type | Description |
|---|---|
| Series: | - |
| Package: | Tray |
| Part Status: | Obsolete |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPDDR4 |
| Memory Size: | 32Gb (512M x 64) |
| Memory Interface: | - |
| Clock Frequency: | 1.6 GHz |
| Write Cycle Time - Word, Page: | - |
| Access Time: | - |
| Voltage - Supply: | 1.1V |
| Operating Temperature: | -30°C ~ 85°C (TC) |
| Mounting Type: | - |
| Package / Case: | - |
| Supplier Device Package: | - |
| Part Number | Manufacturer & Description | Compare |
|---|---|---|
| MT53B256M64D2PX-062 XT ES:C TR Match 64% |
Micron Technology
IC DRAM 16GBIT 1600MHZ FBGA
|
MT53B512M64D4NZ-062 WT ES:D vs MT53B256M64D2PX-062 XT ES:C TR |
| MT53B512M64D4PV-062 WT ES:C TR Match 100% |
Micron Technology
IC DRAM 32GBIT 1600MHZ FBGA
|
MT53B512M64D4NZ-062 WT ES:D vs MT53B512M64D4PV-062 WT ES:C TR |
| MT53B384M64D4EZ-062 WT ES:B TR Match 85% |
Micron Technology
IC DRAM 24GBIT 1600MHZ FBGA
|
MT53B512M64D4NZ-062 WT ES:D vs MT53B384M64D4EZ-062 WT ES:B TR |
| MT53B768M32D4TT-062 WT ES:B TR Match 85% |
Micron Technology
IC DRAM 24GBIT 1600MHZ FBGA
|
MT53B512M64D4NZ-062 WT ES:D vs MT53B768M32D4TT-062 WT ES:B TR |
| MT53B512M64D4NW-062 WT:D Match 100% |
Micron Technology
IC DRAM 32GBIT 1600MHZ
|
MT53B512M64D4NZ-062 WT ES:D vs MT53B512M64D4NW-062 WT:D |
| MT53B512M64D4NW-062 WT:D TR Match 100% |
Micron Technology
IC DRAM 32GBIT 1600MHZ
|
MT53B512M64D4NZ-062 WT ES:D vs MT53B512M64D4NW-062 WT:D TR |
| Quantity | Unit Price | Ext. Price |
|---|
Current price of MT53B512M64D4NZ-062 WT ES:D is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@Vigorcomp.com
IC NVSRAM 8MBIT PARALLEL 80SIMM
IC SRAM 64KBIT PARALLEL 100TQFP
IC DRAM 2GBIT PARALLEL 168VFBGA
CAP CER 470PF 500V NP0 1825
XTAL OSC PROG XO CMOS CTR SPRD
CAP CER 15PF 50V 0805 EPOXY
IC DRAM 32GBIT 1600MHZ FBGA