This detailed comparison of 70T3589S166DR8 and 70V7519S166DRI8 in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.
| Manufacturer | Renesas Electronics America | Renesas Electronics America |
|---|---|---|
| Package / Case | 208-BFQFP | 208-BFQFP |
| Description | IC SRAM 2MBIT PARALLEL 208PQFP | IC SRAM 9MBIT PARALLEL 208PQFP |
| In Stock | 0 | 600 |
| Mounting Type | Surface Mount | Surface Mount |
| Part Status | Obsolete | Obsolete |
| Series | - | - |
| Package | Tape & Reel (TR) | Tray |
| Memory Type | Volatile | Volatile |
| Memory Format | SRAM | SRAM |
| Technology | SRAM - Dual Port, Synchronous | SRAM - Dual Port, Synchronous |
| Memory Size | 2Mb (64K x 36) | 9Mb (256K x 36) |
| Memory Interface | Parallel | Parallel |
| Clock Frequency | 166 MHz | 166 MHz |
| Write Cycle Time - Word, Page | - | - |
| Access Time | 3.6 ns | 3.6 ns |
| Voltage - Supply | 2.4V ~ 2.6V | 3.15V ~ 3.45V |
| Operating Temperature | 0°C ~ 70°C (TA) | -40°C ~ 85°C (TA) |
| Supplier Device Package | 208-PQFP (28x28) | 208-PQFP (28x28) |
| Part Number | Manufacturer | Description | Request For Quote |
|---|---|---|---|
| MT53B4DBDT-DC TR | Micron Technology | SPECIAL/CUSTOM LPDDR4 |
|
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|
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|
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|
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| M29W640GT70NA6F TR | Micron Technology | IC FLASH 64MBIT PARALLEL 48TSOP |
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| MT48H16M32LFB5-6 AAT:C TR | Micron Technology | IC DRAM 512MBIT PARALLEL 90VFBGA |
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| 16-3417-01-T | Cypress Semiconductor | IC GATE NOR |
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| S29PL127J70BAI020 | Cypress Semiconductor | IC FLASH 128MBIT PARALLEL 64FBGA |
|
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|
| M50FW040N5TG TR | Micron Technology | IC FLASH 4MBIT PARALLEL 40TSOP |
|
| 70V06L45J | Renesas Electronics America | IC SRAM 128KBIT PARALLEL 68PLCC |
|
| MT49H16M36FM-18:B | Micron Technology | IC DRAM 576MBIT PARALLEL 144UBGA |
|
