This detailed comparison of 71V25761S183BGI and 71V35761SA183BGGI in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.
| Manufacturer | Renesas Electronics America | Renesas Electronics America |
|---|---|---|
| Package / Case | 119-BGA | 119-BGA |
| Description | IC SRAM 4.5MBIT PARALLEL 119PBGA | IC SRAM 4.5MBIT PARALLEL 119PBGA |
| In Stock | 230 | 330 |
| Mounting Type | Surface Mount | Surface Mount |
| Part Status | Active | Active |
| Series | - | - |
| Package | Tray | Tray |
| Memory Type | Volatile | Volatile |
| Memory Format | SRAM | SRAM |
| Technology | SRAM - Synchronous, SDR | SRAM - Synchronous, SDR |
| Memory Size | 4.5Mb (128K x 36) | 4.5Mb (128K x 36) |
| Memory Interface | Parallel | Parallel |
| Clock Frequency | 183 MHz | 183 MHz |
| Write Cycle Time - Word, Page | - | - |
| Access Time | 3.3 ns | 3.3 ns |
| Voltage - Supply | 3.135V ~ 3.465V | 3.135V ~ 3.465V |
| Operating Temperature | -40°C ~ 85°C (TA) | -40°C ~ 85°C (TA) |
| Supplier Device Package | 119-PBGA (14x22) | 119-PBGA (14x22) |
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|---|---|---|---|
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|
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|
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|
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| NM24C04M8 | Sanyo Semiconductor/ON Semiconductor | IC EEPROM 4KBIT I2C 100KHZ 8SO |
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| W25Q64JVZPJM TR | Winbond Electronics Corporation | IC FLASH 64MBIT SPI/QUAD 8WSON |
|
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| MT48LC32M8A2TG-75:D TR | Micron Technology | IC DRAM 256MBIT PAR 54TSOP II |
|
| W9751G6KB-18 | Winbond Electronics Corporation | IC DRAM 512MBIT PARALLEL 84WBGA |
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| IS43TR16512A-125KBL-TR | ISSI (Integrated Silicon Solution, Inc.) | IC DRAM 8GBIT PARALLEL 96LFBGA |
|
