This detailed comparison of 71V35761S200BGI8 and 71V35761SA200BGI8 in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.
| Manufacturer | Renesas Electronics America | Renesas Electronics America |
|---|---|---|
| Package / Case | 119-BGA | 119-BGA |
| Description | IC SRAM 4.5MBIT PARALLEL 119PBGA | IC SRAM 4.5MBIT PARALLEL 119PBGA |
| In Stock | 915 | 387 |
| Mounting Type | Surface Mount | Surface Mount |
| Part Status | Obsolete | Obsolete |
| Series | - | - |
| Package | Tape & Reel (TR) | Tape & Reel (TR) |
| Memory Type | Volatile | Volatile |
| Memory Format | SRAM | SRAM |
| Technology | SRAM - Synchronous, SDR | SRAM - Synchronous, SDR |
| Memory Size | 4.5Mb (128K x 36) | 4.5Mb (128K x 36) |
| Memory Interface | Parallel | Parallel |
| Clock Frequency | 200 MHz | 200 MHz |
| Write Cycle Time - Word, Page | - | - |
| Access Time | 3.1 ns | 3.1 ns |
| Voltage - Supply | 3.135V ~ 3.465V | 3.135V ~ 3.465V |
| Operating Temperature | -40°C ~ 85°C (TA) | -40°C ~ 85°C (TA) |
| Supplier Device Package | 119-PBGA (14x22) | 119-PBGA (14x22) |
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|---|---|---|---|
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|
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|
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|
| MT48LC32M8A2P-6A IT:G TR | Micron Technology | IC DRAM 256MBIT PAR 54TSOP II |
|
| IDT71V424L10YI8 | Renesas Electronics America | IC SRAM 4MBIT PARALLEL 36SOJ |
|
| W632GG8AB-15 | Winbond Electronics Corporation | IC DRAM 2GBIT PARALLEL 78WBGA |
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| STK12C68-SF45I | Cypress Semiconductor | IC NVSRAM 64KBIT PARALLEL 28SOIC |
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| M25P05-AVMP6G | Micron Technology | IC FLASH 512KBIT SPI 8VDFPN |
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| IDT71V35761S183BQI | Renesas Electronics America | IC SRAM 4.5MBIT PAR 165CABGA |
|
| CY7C106D-10VXI | Cypress Semiconductor | IC SRAM 1MBIT PARALLEL 28SOJ |
|
