AS4C4M16SA-6BINTR vs AS4C4M16SA-6BIN

This detailed comparison of AS4C4M16SA-6BINTR and AS4C4M16SA-6BIN in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.

AS4C4M16SA-6BINTR

AS4C4M16SA-6BINTR

Alliance Memory, Inc.

AS4C4M16SA-6BIN

AS4C4M16SA-6BIN

Alliance Memory, Inc.

Specifications
Manufacturer Alliance Memory, Inc. Alliance Memory, Inc.
Package / Case 54-TFBGA 54-TFBGA
Description IC DRAM 64MBIT PARALLEL 54TFBGA IC DRAM 64MBIT PARALLEL 54TFBGA
In Stock 2 531 68
Mounting Type Surface Mount Surface Mount
Part Status Active Active
Series - -
Package Tape & Reel (TR) Tray
Memory Type Volatile Volatile
Memory Format DRAM DRAM
Technology SDRAM SDRAM
Memory Size 64Mb (4M x 16) 64Mb (4M x 16)
Memory Interface Parallel Parallel
Clock Frequency 166 MHz 166 MHz
Write Cycle Time - Word, Page 2ns 2ns
Access Time 5.4 ns 5.4 ns
Voltage - Supply 3V ~ 3.6V 3V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA) -40°C ~ 85°C (TA)
Supplier Device Package 54-TFBGA (8x8) 54-TFBGA (8x8)
Part Number Manufacturer Description Request For Quote
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THGAF8G9T43BAIR Toshiba Memory America, Inc. (Kioxia America, Inc.) IC FLASH 64GBIT UFS 153VFBGA
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AS4C4M16SA-6BANTR Alliance Memory, Inc. IC DRAM 64MBIT PARALLEL 54TFBGA
S29PL127J70TFI130 Cypress Semiconductor IC FLASH 128MBIT PARALLEL 56TSOP
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AS7C4098A-12JCNTR Alliance Memory, Inc. IC SRAM 4MBIT PARALLEL 44SOJ
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IS42SM16800H-75BLI ISSI (Integrated Silicon Solution, Inc.) IC DRAM 128MBIT PARALLEL 54TFBGA
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W9825G2JB-75 TR Winbond Electronics Corporation IC DRAM 256MBIT PARALLEL 90TFBGA
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S29AL008J55TFNR20 Cypress Semiconductor IC FLASH 8MBIT PARALLEL 48TSOP I
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