AS4C8M16S-6BIN vs AS4C8M16S-6BINTR

This detailed comparison of AS4C8M16S-6BIN and AS4C8M16S-6BINTR in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.

AS4C8M16S-6BIN

AS4C8M16S-6BIN

Alliance Memory, Inc.

AS4C8M16S-6BINTR

AS4C8M16S-6BINTR

Alliance Memory, Inc.

Specifications
Manufacturer Alliance Memory, Inc. Alliance Memory, Inc.
Package / Case 54-TFBGA 54-TFBGA
Description IC DRAM 128MBIT PARALLEL 54TFBGA IC DRAM 128MBIT PARALLEL 54TFBGA
In Stock 3 516 8 041
Mounting Type Surface Mount Surface Mount
Part Status Obsolete Obsolete
Series - -
Package Tray Tape & Reel (TR)
Memory Type Volatile Volatile
Memory Format DRAM DRAM
Technology SDRAM SDRAM
Memory Size 128Mb (8M x 16) 128Mb (8M x 16)
Memory Interface Parallel Parallel
Clock Frequency 166 MHz 166 MHz
Write Cycle Time - Word, Page 2ns 2ns
Access Time 5 ns 5 ns
Voltage - Supply 3V ~ 3.6V 3V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA) -40°C ~ 85°C (TA)
Supplier Device Package 54-TFBGA (8x8) 54-TFBGA (8x8)
Part Number Manufacturer Description Request For Quote
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AS4C256M16D3LA-12BINTR Alliance Memory, Inc. IC DRAM 4GBIT PARALLEL 96FBGA
IS25LQ032B-JKLE-TR ISSI (Integrated Silicon Solution, Inc.) IC FLASH 32MBIT SPI/QUAD 8WSON
MT46H8M32LFB5-5 IT:H TR Micron Technology IC DRAM 256MBIT PARALLEL 90VFBGA
STK22C48-SF25 Cypress Semiconductor IC NVSRAM 16KBIT PARALLEL 28SOIC
MT46H128M32L2KQ-48 WT:C TR Micron Technology IC DRAM 4GBIT PARALLEL 168WFBGA
W25Q64FWSSIG Winbond Electronics Corporation IC FLASH 64MBIT SPI 104MHZ 8SOIC
AT24C64N-10SI Roving Networks / Microchip Technology IC EEPROM 64KBIT I2C 8SOIC
AT27BV020-15JI Roving Networks / Microchip Technology IC EPROM 2MBIT PARALLEL 32PLCC
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AT28C256F-15TI Roving Networks / Microchip Technology IC EEPROM 256KBIT PAR 28TSOP
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