This detailed comparison of CAT25160HU2IGT3C and CAT25080HU2IGT3C in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.
| Manufacturer | Sanyo Semiconductor/ON Semiconductor | Sanyo Semiconductor/ON Semiconductor |
|---|---|---|
| Package / Case | 8-UFDFN Exposed Pad | 8-UFDFN Exposed Pad |
| Description | IC EEPROM 16KB SER SPI 8UDFN | IC EEPROM 8KBIT SPI 8UDFN |
| In Stock | 7 020 | 5 130 |
| Mounting Type | Surface Mount | Surface Mount |
| Part Status | Last Time Buy | Last Time Buy |
| Series | - | - |
| Package | Tape & Reel (TR) | Tape & Reel (TR) |
| Memory Type | Non-Volatile | Non-Volatile |
| Memory Format | EEPROM | EEPROM |
| Technology | EEPROM | EEPROM |
| Memory Size | 16Kb (2K x 8) | 8K (1K x 8) |
| Memory Interface | SPI | SPI |
| Clock Frequency | 10 MHz | 10 MHz |
| Write Cycle Time - Word, Page | 5ms | 5ms |
| Access Time | - | - |
| Voltage - Supply | 1.8V ~ 5.5V | 1.8V ~ 5.5V |
| Operating Temperature | -40°C ~ 85°C (TA) | -40°C ~ 85°C (TA) |
| Supplier Device Package | 8-uDFN (2x2) | 8-uDFN (2x2) |
| Part Number | Manufacturer | Description | Request For Quote |
|---|---|---|---|
| MTFC16GJTEC-IT TR | Micron Technology | IC FLASH 128GBIT MMC 169WFBGA |
|
| MT29C8G96MAZBADKD-5 IT | Micron Technology | IC FLASH RAM 8GBIT PAR 168VFBGA |
|
| CAT24C16TDE-GT3 | Sanyo Semiconductor/ON Semiconductor | IC EEPROM 16KBIT I2C TSOT23-5 |
|
| MT53D1536M32D6BE-053 WT ES:D | Micron Technology | IC DRAM 48GBIT 1866MHZ FBGA |
|
| N25Q032A13EV140 | Micron Technology | IC FLASH 32MBIT SPI 108MHZ DIE |
|
| MT53B1024M32D4NQ-053 WT:C | Micron Technology | IC DRAM 32GBIT 1866MHZ 200VFBGA |
|
| 25CS640T-E/SN | Roving Networks / Microchip Technology | IC MEMORY EEPROM 64MB SPI |
|
| N25Q064A13ESED0G | Micron Technology | IC FLASH 64MBIT SPI 108MHZ 8SO W |
|
| DS28E81P+ | Maxim Integrated | RADIATION RESISTANT |
|
| MT53D1G64D8NW-046 WT ES:E TR | Micron Technology | LPDDR4 64G 1GX64 FBGA 8DP |
|
| MT29F512G08AUEBBH8-12:B TR | Micron Technology | IC FLASH 512GBIT PAR 152LBGA |
|
| CG7498AAT | Cypress Semiconductor | IC SRAM NON VOLATILE 48FBGA |
|
| S29WS128N0LBFW010 | Cypress Semiconductor | IC MEMORY NOR |
|
| IS43R16160F-5BI | ISSI (Integrated Silicon Solution, Inc.) | IC DRAM 256MBIT PARALLEL 60TFBGA |
|
| 40060274 | Cypress Semiconductor | IC FLASH NOR |
|
