This detailed comparison of CAT25160HU2IGT3C and CAT25160HU2I-GT3 in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.
| Manufacturer | Sanyo Semiconductor/ON Semiconductor | VIGOR |
|---|---|---|
| Package / Case | 8-UFDFN Exposed Pad | 8-UFDFN Exposed Pad |
| Description | IC EEPROM 16KB SER SPI 8UDFN | IC EEPROM 16KBIT SPI 10MHZ 8UDFN |
| In Stock | 7 020 | 3 000 |
| Mounting Type | Surface Mount | Surface Mount |
| Part Status | Last Time Buy | Obsolete |
| Series | - | - |
| Package | Tape & Reel (TR) | Bulk |
| Memory Type | Non-Volatile | Non-Volatile |
| Memory Format | EEPROM | EEPROM |
| Technology | EEPROM | EEPROM |
| Memory Size | 16Kb (2K x 8) | 16Kb (2K x 8) |
| Memory Interface | SPI | SPI |
| Clock Frequency | 10 MHz | 10 MHz |
| Write Cycle Time - Word, Page | 5ms | 5ms |
| Access Time | - | - |
| Voltage - Supply | 1.8V ~ 5.5V | 1.8V ~ 5.5V |
| Operating Temperature | -40°C ~ 85°C (TA) | -40°C ~ 85°C (TA) |
| Supplier Device Package | 8-uDFN (2x2) | 8-uDFN (2x2) |
| Part Number | Manufacturer | Description | Request For Quote |
|---|---|---|---|
| MTFC16GJTEC-IT TR | Micron Technology | IC FLASH 128GBIT MMC 169WFBGA |
|
| MT29C8G96MAZBADKD-5 IT | Micron Technology | IC FLASH RAM 8GBIT PAR 168VFBGA |
|
| CAT24C16TDE-GT3 | Sanyo Semiconductor/ON Semiconductor | IC EEPROM 16KBIT I2C TSOT23-5 |
|
| MT53D1536M32D6BE-053 WT ES:D | Micron Technology | IC DRAM 48GBIT 1866MHZ FBGA |
|
| N25Q032A13EV140 | Micron Technology | IC FLASH 32MBIT SPI 108MHZ DIE |
|
| MT53B1024M32D4NQ-053 WT:C | Micron Technology | IC DRAM 32GBIT 1866MHZ 200VFBGA |
|
| 25CS640T-E/SN | Roving Networks / Microchip Technology | IC MEMORY EEPROM 64MB SPI |
|
| N25Q064A13ESED0G | Micron Technology | IC FLASH 64MBIT SPI 108MHZ 8SO W |
|
| DS28E81P+ | Maxim Integrated | RADIATION RESISTANT |
|
| MT53D1G64D8NW-046 WT ES:E TR | Micron Technology | LPDDR4 64G 1GX64 FBGA 8DP |
|
| MT29F512G08AUEBBH8-12:B TR | Micron Technology | IC FLASH 512GBIT PAR 152LBGA |
|
| CG7498AAT | Cypress Semiconductor | IC SRAM NON VOLATILE 48FBGA |
|
| S29WS128N0LBFW010 | Cypress Semiconductor | IC MEMORY NOR |
|
| IS43R16160F-5BI | ISSI (Integrated Silicon Solution, Inc.) | IC DRAM 256MBIT PARALLEL 60TFBGA |
|
| 40060274 | Cypress Semiconductor | IC FLASH NOR |
|
