MT29F256G08EBHAFJ4-3RES:A TR vs MT29F256G08EBHBFB16C3WC1-FES

This detailed comparison of MT29F256G08EBHAFJ4-3RES:A TR and MT29F256G08EBHBFB16C3WC1-FES in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.

MT29F256G08EBHAFJ4-3RES:A TR

Micron Technology

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MT29F256G08EBHBFB16C3WC1-FES

Micron Technology

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Specifications Hide identical items

Manufacturer	Micron Technology	Micron Technology
Package / Case	Die	Die
Description	IC FLASH 256GBIT PARALLEL 333MHZ	IC FLASH 256G PARALLEL
In Stock	812	571
Mounting Type	Surface Mount	Surface Mount
Part Status	Active	Active
Series	-	-
Package	Tape & Reel (TR)	Bulk
Memory Type	Non-Volatile	Non-Volatile
Memory Format	FLASH	FLASH
Technology	FLASH - NAND (TLC)	FLASH - NAND (TLC)
Memory Size	256Gb (32G x 8)	256Gb (32G x 8)
Memory Interface	Parallel	Parallel
Clock Frequency	333 MHz	333 MHz
Write Cycle Time - Word, Page	-	-
Access Time	-	-
Voltage - Supply	2.5V ~ 3.6V	2.5V ~ 3.6V
Operating Temperature	0°C ~ 70°C (TA)	0°C ~ 70°C (TA)
Supplier Device Package	Die	Die