MT47H128M8SH-25E AAT:M vs AS4C64M8D2-25BAN

This detailed comparison of MT47H128M8SH-25E AAT:M and AS4C64M8D2-25BAN in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.

MT47H128M8SH-25E AAT:M

MT47H128M8SH-25E AAT:M

Micron Technology

AS4C64M8D2-25BAN

AS4C64M8D2-25BAN

Alliance Memory, Inc.

Specifications
Manufacturer Micron Technology Alliance Memory, Inc.
Package / Case 60-TFBGA 60-TFBGA
Description IC DRAM 1GBIT PARALLEL 60FBGA IC DRAM 512MBIT PARALLEL 60FBGA
In Stock 300 2 155
Mounting Type Surface Mount Surface Mount
Part Status Obsolete Active
Series Automotive, AEC-Q100 -
Package Tray Tray
Memory Type Volatile Volatile
Memory Format DRAM DRAM
Technology SDRAM - DDR2 SDRAM - DDR2
Memory Size 1Gb (128M x 8) 512Mb (64M x 8)
Memory Interface Parallel Parallel
Clock Frequency 400 MHz 400 MHz
Write Cycle Time - Word, Page 15ns 15ns
Access Time 400 ps 400 ps
Voltage - Supply 1.7V ~ 1.9V 1.7V ~ 1.9V
Operating Temperature -40°C ~ 105°C (TC) -40°C ~ 105°C (TC)
Supplier Device Package 60-FBGA (8x10) 60-FBGA (8x10)
Part Number Manufacturer Description Request For Quote
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IS42S16400F-7TLI-TR ISSI (Integrated Silicon Solution, Inc.) IC DRAM 64MBIT PAR 54TSOP II
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IDT71V2546S100PF8 Renesas Electronics America IC SRAM 4.5MBIT PARALLEL 100TQFP
AT28LV256-25TC Roving Networks / Microchip Technology IC EEPROM 256KBIT PAR 28TSOP
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IDT71V67602S133BQ Renesas Electronics America IC SRAM 9MBIT PARALLEL 165CABGA
MT29F128G08CBCEBJ4-37ES:E TR Micron Technology IC FLASH 128GBIT PAR 132VBGA
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