MT53D512M16D1DS-046 WT:D TR vs MT53E256M32D2DS-046 AAT:B

This detailed comparison of MT53D512M16D1DS-046 WT:D TR and MT53E256M32D2DS-046 AAT:B in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.

MT53D512M16D1DS-046 WT:D TR

Micron Technology

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MT53E256M32D2DS-046 AAT:B

Micron Technology

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Specifications Hide identical items

Manufacturer	Micron Technology	Micron Technology
Package / Case	200-WFBGA	200-WFBGA
Description	IC DRAM 8GBIT 2.133GHZ 200WFBGA	IC DRAM 8GBIT 2.133GHZ 200WFBGA
In Stock	487	713
Mounting Type	Surface Mount	Surface Mount
Part Status	Active	Active
Series	Automotive, AEC-Q100	Automotive, AEC-Q100
Package	Tape & Reel (TR)	Tray
Memory Type	Volatile	Volatile
Memory Format	DRAM	DRAM
Technology	SDRAM - Mobile LPDDR4	SDRAM - Mobile LPDDR4
Memory Size	8Gb (512M x 16)	8Gb (256M x 32)
Memory Interface	-	-
Clock Frequency	2.133 GHz	2.133 GHz
Write Cycle Time - Word, Page	-	-
Access Time	-	-
Voltage - Supply	1.1V	1.1V
Operating Temperature	-30°C ~ 85°C (TC)	-40°C ~ 105°C (TC)
Supplier Device Package	200-WFBGA (10x14.5)	200-WFBGA (10x14.5)