MT53D512M64D4NW-046 WT ES:E TR vs MT53D512M64D4NW-046 WT ES:E

This detailed comparison of MT53D512M64D4NW-046 WT ES:E TR and MT53D512M64D4NW-046 WT ES:E in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.

MT53D512M64D4NW-046 WT ES:E TR

MT53D512M64D4NW-046 WT ES:E TR

Micron Technology

MT53D512M64D4NW-046 WT ES:E

MT53D512M64D4NW-046 WT ES:E

Micron Technology

Specifications
Manufacturer Micron Technology Micron Technology
Package / Case 432-VFBGA 432-VFBGA
Description IC DRAM 32GBIT 2133MHZ 432VFBGA IC DRAM 32GBIT 2133MHZ 432VFBGA
In Stock 790 925
Mounting Type Surface Mount Surface Mount
Part Status Active Active
Series - -
Package Tape & Reel (TR) Tray
Memory Type Volatile Volatile
Memory Format DRAM DRAM
Technology SDRAM - Mobile LPDDR4 SDRAM - Mobile LPDDR4
Memory Size 32Gb (512M x 64) 32Gb (512M x 64)
Memory Interface - -
Clock Frequency 2.133 GHz 2.133 GHz
Write Cycle Time - Word, Page - -
Access Time - -
Voltage - Supply 1.1V 1.1V
Operating Temperature -30°C ~ 85°C (TC) -30°C ~ 85°C (TC)
Supplier Device Package 432-VFBGA (15x15) 432-VFBGA (15x15)
Part Number Manufacturer Description Request For Quote
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70V24L55PFI8 Renesas Electronics America IC SRAM 64KBIT PARALLEL 100TQFP
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28302961 A Cypress Semiconductor IC FLASH NOR
MT28GU512AAA1EGC-0SIT TR Micron Technology IC FLASH 512MBIT PARALLEL 64TBGA
MT49H8M36BM-33:B TR Micron Technology IC DRAM 288MBIT PARALLEL 144UBGA
MT53B4DCNQ-DC TR Micron Technology IC DRAM 200VFBGA
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