MT53E256M16D1DS-046 WT:B TR vs MT53E512M64D4NK-046 WT:D

This detailed comparison of MT53E256M16D1DS-046 WT:B TR and MT53E512M64D4NK-046 WT:D in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.

MT53E256M16D1DS-046 WT:B TR

Micron Technology

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MT53E512M64D4NK-046 WT:D

Micron Technology

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Specifications Hide identical items

Manufacturer	Micron Technology	Micron Technology
Package / Case	-	-
Description	IC DRAM LPDDR4 WFBGA	IC DRAM LPDDR4 BGA
In Stock	302	600
Mounting Type	-	-
Part Status	Active	Active
Series	-	-
Package	Tape & Reel (TR)	Tray
Memory Type	Volatile	Volatile
Memory Format	DRAM	DRAM
Technology	SDRAM - Mobile LPDDR4	SDRAM - Mobile LPDDR4
Memory Size	4Gb (256M x 16)	32Gb (512M x 64)
Memory Interface	-	-
Clock Frequency	2.133 GHz	2.133 GHz
Write Cycle Time - Word, Page	-	-
Access Time	-	-
Voltage - Supply	1.1V	1.1V
Operating Temperature	-30°C ~ 85°C (TC)	-30°C ~ 85°C (TC)
Supplier Device Package	-	-