This detailed comparison of N25Q064A13ESF42EE01 and N25Q00AA11GSF40G in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.
| Manufacturer | Micron Technology | Micron Technology |
|---|---|---|
| Package / Case | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC (0.295", 7.50mm Width) |
| Description | IC FLASH 64MBIT SPI 108MHZ 16SO | IC FLASH 1GBIT SPI 108MHZ 16SO |
| In Stock | 159 | 905 |
| Mounting Type | Surface Mount | Surface Mount |
| Part Status | Obsolete | Obsolete |
| Series | - | - |
| Package | Tube | Tray |
| Memory Type | Non-Volatile | Non-Volatile |
| Memory Format | FLASH | FLASH |
| Technology | FLASH - NOR | FLASH - NOR |
| Memory Size | 64Mb (16M x 4) | 1Gb (256M x 4) |
| Memory Interface | SPI | SPI |
| Clock Frequency | 108 MHz | 108 MHz |
| Write Cycle Time - Word, Page | 8ms, 5ms | 8ms, 5ms |
| Access Time | - | - |
| Voltage - Supply | 2.7V ~ 3.6V | 1.7V ~ 2V |
| Operating Temperature | -40°C ~ 85°C (TA) | -40°C ~ 85°C (TA) |
| Supplier Device Package | 16-SO | 16-SO |
| Part Number | Manufacturer | Description | Request For Quote |
|---|---|---|---|
| EDFP112A3PB-GDTJ-F-D | Micron Technology | IC DRAM 24GBIT PARALLEL 800MHZ |
|
| MT41J256M8HX-187E:D | Micron Technology | IC DRAM 2GBIT PARALLEL 78FBGA |
|
| CAT24C32ZD2I-GT2 | Sanyo Semiconductor/ON Semiconductor | IC EEPROM 32KBIT I2C 1MHZ 8TDFN |
|
| MT46H64M32LFCX-5 WT:B TR | Micron Technology | IC DRAM 2GBIT PARALLEL 90VFBGA |
|
| 47C16-I/S16K | Roving Networks / Microchip Technology | IC EERAM 16KBIT I2C 1MHZ DIE |
|
| M29W400DT70ZE6F TR | Micron Technology | IC FLASH 4MBIT PARALLEL 48TFBGA |
|
| MT29F512G08CKCBBH7-6R:B TR | Micron Technology | IC FLASH 512GBIT PAR 152TBGA |
|
| MT53B512M64D4NW-062 WT ES:D TR | Micron Technology | IC DRAM 32GBIT 1600MHZ FBGA |
|
| MT29PZZZ8D4BKFSK-18 W.94L TR | Micron Technology | MOD EMMC NAND 4GB 162VFBGA |
|
| MT29F512G08CMCBBH7-6ITR:B | Micron Technology | IC FLASH 512GBIT PAR 152TBGA |
|
| EDF8132A3MA-JD-F-D | Micron Technology | IC DRAM 8GBIT PARALLEL 933MHZ |
|
| AT25256-10UI-2.7 | Roving Networks / Microchip Technology | IC EEPROM 256KBIT SPI 3MHZ 8DBGA |
|
| MT52L512M64D4PQ-093 WT:B TR | Micron Technology | IC DRAM 32GBIT 1067MHZ 253VFBGA |
|
| CG8536AA | Cypress Semiconductor | IC PSOC3 |
|
| M27C2001-10C6 | STMicroelectronics | IC EPROM 2MBIT PARALLEL 32PLCC |
|
