This detailed comparison of N25Q064A13EV140 and N25Q064A13E14D1F TR in the Memory provides valuable insights into their specifications and features. Key aspects such as Manufacturer, Package, Mounting Type, and core parameters are thoroughly analyzed. This side-by-side comparison simplifies component selection. To learn more, explore their datasheets or request a quote directly.
| Manufacturer | Micron Technology | Micron Technology |
|---|---|---|
| Package / Case | 24-TBGA | 24-TBGA |
| Description | IC FLASH 64MBIT SPI 24TPBGA | IC FLASH 64MBIT SPI 24TPBGA |
| In Stock | 230 | 750 |
| Mounting Type | Surface Mount | Surface Mount |
| Part Status | Obsolete | Active |
| Series | - | - |
| Package | Tray | Tape & Reel (TR) |
| Memory Type | Non-Volatile | Non-Volatile |
| Memory Format | FLASH | FLASH |
| Technology | FLASH - NOR | FLASH - NOR |
| Memory Size | 64Mb (16M x 4) | 64Mb (16M x 4) |
| Memory Interface | SPI | SPI |
| Clock Frequency | 108 MHz | 108 MHz |
| Write Cycle Time - Word, Page | 8ms, 5ms | 8ms, 5ms |
| Access Time | - | - |
| Voltage - Supply | 2.7V ~ 3.6V | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) | -40°C ~ 85°C (TA) |
| Supplier Device Package | 24-T-PBGA (6x8) | 24-T-PBGA (6x8) |
| Part Number | Manufacturer | Description | Request For Quote |
|---|---|---|---|
| 054-51760-57 | Renesas Electronics America | MEMORY SRAM |
|
| MT29F256G08AUAAAC5-IT:A | Micron Technology | IC FLASH 256GBIT PARALLEL 52VLGA |
|
| MT29F256G08CKCDBJ5-6R:D | Micron Technology | IC FLASH 256GBIT PAR 132TBGA |
|
| MT29F512G08CMCCBH7-6C:C | Micron Technology | IC FLASH 512GBIT PAR 152TBGA |
|
| 793.559-00 | SkyHigh Memory Limited | IC GATE NAND |
|
| 70P255L90BYGI8 | Renesas Electronics America | IC SRAM 128KBIT PAR 100CABGA |
|
| 25AA1024-I/S16K | Roving Networks / Microchip Technology | IC EEPROM 1MBIT SPI 20MHZ DIE |
|
| 25AA010A/S16K | Roving Networks / Microchip Technology | IC EEPROM 1KBIT SPI 10MHZ DIE |
|
| 25AA080B-I/WF15K | Roving Networks / Microchip Technology | IC EEPROM 8KBIT SPI 10MHZ DIE |
|
| M27C256B-90C1 | STMicroelectronics | IC EPROM 256KBIT PARALLEL 32PLCC |
|
| MT29F128G08AMCABK3-10:A TR | Micron Technology | IC FLASH 128GBIT PARALLEL 100MHZ |
|
| MT53D4D1ASQ-DC | Micron Technology | LPDDR4 0 768MX64 FBGA QDP |
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| MT53B512M32D2NP-062 AIT:C TR | Micron Technology | IC DRAM 16GBIT 1600MHZ 200WFBGA |
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| W98AD6KBGX6I TR | Winbond Electronics Corporation | 1GB MSDR X16 166MHZ IND |
|
| MT53B512M64D4EZ-062 WT:B | Micron Technology | IC DRAM 32GBIT 1600MHZ FBGA |
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